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Power mosfet smd 110v STC2326
Power mosfet smd 110v STC2326

Power mosfet smd 110v STC2326

Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Delivery Time: 30 Days

Basic Info

    Model No.: YZPST-STC2326

Additional Info

    Productivity: 1000

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 10000

    Certificate: ISO9001-2008,ROHS

    HS Code: 85413000

    Port: SHANGHAI

Product Description

BTA30 Series Triacs

YZPST-STC2326

DESCRIPTION


The STC2326 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The STC2326 has been designed specifically to improve the overall efficiency of DC/ DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

APPLICATIONS


Powered System

DC/DC Converter

Load Switch


FEATURES

110V/3A,RDS(ON)=310mΩ@VGS=10V

High density cell design for extremely low RDS (ON)

Exceptional on-resistance and maximum DC current capability

SOT-23-6L package design


PIN CONFIGURATION(SOT-23-6L)

mosfet STC2326 (1)

Pin

Symbol

Description

1

D

Drain

2

D

Drain

3

G

Gate

4

S

Source

5

D

Drain

6

D

Drain

ORDERING INFORMATION

Part Number

Package

Part Marking

SPN2326S26RGB

SOT-23-6L

26YW

ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

110

V

Gate Source Voltage

VGSS

±20

V

Continuous Drain Current(TJ=150℃)

TA=25℃

ID

3.0

A

TA=70℃

2.0

Pulsed Drain Current

IDM

10

A

Power Dissipation

TA=25℃

PD

2.0

W

TA=70℃

1.3

Operating Junction Temperature

TJ

-55/150

Storage Temperature Range

TSTG

-55/150

Thermal Resistance-Junction to Ambient

RθJA

62.5

/W

Parameter

Symbol

Conditions

Min.

Typ

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V,ID=250uA

110

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250uA

1

2.0

2.5

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS=80V,VGS=0V

1

uA

VDS=80V,VGS=0V TJ=125

5

On-State Drain Current

ID(on)

VDS5V,VGS =10V

3.0

A

Drain-Source On-Resistance

RDS(on)

VGS= 10V,ID=3A

0.26

0.31

Ω

Forward Transconductance

gfs

VDS=10V,ID=3A

2.4

S

Diode Forward Voltage

VSD

IS=1A,VGS =0V

1.2

V

Dynamic

Total Gate Charge

Qg

VDS=80V,VGS=10V ID= 5A

9

13

nC

Gate-Source Charge

Qgs

2

Gate-Drain Charge

Qgd

1.4

Input Capacitance

Ciss

VDS=25,VGS=0V

f=1MHz

508

pF

Output Capacitance

Coss

29

Reverse Transfer Capacitance

Crss

16.5

Turn-On Time

td(on)

VDD=50V,RL=10Ω

ID=3A,VGEN=10V RG=3.3Ω

2

nS

tr

21.5

Turn-Off Time

td(off)

11.2

tf

18.8

mosfet STC2326 (2)mosfet STC2326 (3)


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Product Categories : Semiconductor Plastic Package > Silicon Transistor

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John chang

Mr. John chang

Email:

info@yzpst.com

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