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85A Electronic cigarette lighter Mosfet Load 85N03

    Unit Price: USD 0.299 / Piece/Pieces
    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Min. Order: 1000 Piece/Pieces
    Delivery Time: 30 Days

Basic Info

Model No.: YZPST-85N03

Type: Intrinsic Semiconductor

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description

Electronic cigarette lighter Mosfet

YZPST-85N03

85A Electronic cigarette lighter Mosfet Load Switch Mosfet 85N03

VDSS30V

RDS(ON) 2.3mΩ(max.)@ VGS=10V

RDS(ON) 3.0mΩ(max.)@ VGS=4.5V

ID 85A

Description

DFN5X6-8L

YZPST85N03 uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

Applications

Features

Lithium-Ion Secondary Batteries

Load Switch

DC-DC converters and Off-line UPS

Low On-Resistance

Low Input Capacitance

Low Miller Charge

Low Input / Output Leakage


Absolute Maximum Ratings (TA=25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

30V

V

Gate-Source Voltage

VGSS

±20V

V

Drain Current-Continuous @ TC=25 NOTE 3

ID

85

A

Drain Current-Continuous @ TC=100 NOTE 3

68

A

Drain Current-Pulsed NOTE 1

IDM

320

A

Avalanche Current, L=0.1mH

IAS

50

A

Avalanche Energy, L=0.1mH

EAS

125

mJ

Maximum Power Dissipation @ TC=25

PD

60

W

Maximum Power Dissipation @ TA=25

5.7

W

Storage Temperature Range

TSTG

-50 to 150°C

°C

Operating Junction Temperature Range

TJ

-50 to 150°C

°C

Thermal Resistance Ratings

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Maximum Junction-to-Ambient NOTE2

RθJA

Steady State

-

-

22

°C/W

Maximum Junction-to-Case

RθJC

Steady State

-

-

2.1

°C/W

Electrical Characteristics(TJ=25°C unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V , IDS=250uA

30

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0V

-

-

1

uA

Gate-Source Leakage Current

IGSS

VGS=±20V , VDS=0V

-

-

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VGS=VDS, IDS=250uA

1.2

-

2.5

V

Drain-Source On-Resistance

RDS(ON)

VGS=10V , IDS=16A

-

1.75

2.3

mΩ

VGS=4.5V , IDS=16A

-

2.6

3.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

VDS=10V, VGS=0V, f=1MHz

-

5910

-

pF

Output Capacitance

Coss

-

725

-

Reverse Transfer Capacitance

Crss

-

537

-

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Td(on)

VDS=15V, VGS=10V, ID=1A , RGEM=3.3Ω

-

20

-

ns

Rise Time

tr

-

6.5

-

Turn-Off Delay Time

Td(off)

-

122

-

Fall Time

tf

-

15

-

Total Gate Charge at 4.5V

Qg

VDS=15V, IDS=16A, VGS=10V

-

54

-

nC

Gate to Source Gate Charge

Qgs

-

18

-

Gate to Drain "Miller" Charge

Qgd

-

20.5

-

SWITCHING CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS=4A

-

-

1.3

V

Body Diode Reverse Recovery Time

trr

If=10A, dl/dt=100A/μs, TJ=25°C

-

46

-

ns

Body Diode Reverse Recovery Charge

Qrr

-

38

-

nC

Notes:

1. Pulse Test: Pulse Width ≦300μs, Duty Cycle≦ 2%.

2. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RΘJC is guaranteed by design while RΘCA is determined by the user`s board design. RΘJA shown below for single device operation on FR-4 in

still air.

3. The maximum current rating is limited by package.


Mosfet 85N03 (1)Mosfet 85N03 (2)Mosfet 85N03 (3)Mosfet 85N03 (4)



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Product Categories : Semiconductor Plastic Package > Silicon Transistor

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  • 85A Electronic cigarette lighter Mosfet Load 85N03
  • 85A Electronic cigarette lighter Mosfet Load 85N03
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