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YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Module Devices> Thyristor Module> YZPST-IXFN62N80Q3 Power MOSFET module factory and manufacturer
YZPST-IXFN62N80Q3 Power MOSFET module factory and manufacturer
YZPST-IXFN62N80Q3 Power MOSFET module factory and manufacturer
YZPST-IXFN62N80Q3 Power MOSFET module factory and manufacturer
YZPST-IXFN62N80Q3 Power MOSFET module factory and manufacturer
YZPST-IXFN62N80Q3 Power MOSFET module factory and manufacturer

YZPST-IXFN62N80Q3 Power MOSFET module factory and manufacturer

$27.510-49 Bag/Bags

$23≥50Bag/Bags

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Min. Order:10 Bag/Bags
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-IXFN62N80Q3

BrandYZPST

VGS±30V

VGS(th)6.5V(max.)

VDSS800V 

ID2549A

PD960W

Product Description

Power MOSFET

 : YZPST-IXFN62N80Q3

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

Avalanche Rated

YZPST-IXFN62N80Q3-1
Product parameters
Symbol
Test Conditions
Maximum Ratings
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
VDSS
TJ = 25°C to 150°C
800V 
VGS
Continuous
±30V
ID25
TC = 25°C
49A
PD
TC = 25°C
960W
VGS(th)
VDS = VGS, ID = 8mA
6.5V(max.)
IDSS
TJ= 125°C
4mA
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
13.6pF
Qg(on)
VGS = 10V, VDS = 0.5 • VDSS, ID = 31A
270nC
TJ
﹣55℃~150℃
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC

Features

International Standard Package

Low Intrinsic Gate Resistance 

miniBLOC with Aluminum Nitride

Isolation 

Avalanche Rated 

Low Package Inductance 

Fast Intrinsic Rectifier 

Low RDS(on) and QG

Applications

DC-DC Converters 

Battery Chargers 

Switch-Mode and Resonant-Mode

Power Supplies 

DC Choppers 

Temperature and Lighting Controls

Advantages

High Power Density 

Easy to Mount 

Space Savings

YZPST-IXFN62N80Q3-2YZPST-IXFN62N80Q3-3



Home> Products> Semiconductor Module Devices> Thyristor Module> YZPST-IXFN62N80Q3 Power MOSFET module factory and manufacturer
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