YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Module Devices> Diode Module> High reliability MFC200 1600V thyristor diode module
High reliability MFC200 1600V thyristor diode module
High reliability MFC200 1600V thyristor diode module
High reliability MFC200 1600V thyristor diode module
High reliability MFC200 1600V thyristor diode module
High reliability MFC200 1600V thyristor diode module
High reliability MFC200 1600V thyristor diode module
High reliability MFC200 1600V thyristor diode module

High reliability MFC200 1600V thyristor diode module

$2550-999 Piece/Pieces

$18≥1000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Land
Port:SHANGHAI
Product Attributes

Model No.YZPST-MFC200-16

BrandYZPST

Place Of OriginChina

VRRM1600V

VDRM1600V

VRSM1700V

IRRM, IDRM70 mA

Dv/dt1000 V/µs

ITAV, IFAV216A

ITRMS, IFRMS340A

ITSM, IFSM6.8kA

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example :
Download :
Thyristor Diode Module MFC200-16
Product Description
YZPST-MFC200-16
THYRISTOR / Diode Module
Features:
- Heat transfer through aluminium-nitride ceramic isolated metal baseplate
- Hard soldered joints for high reliability
- Thyristor with amplifying gate
Typical applications:
- DC motor control - AC motor soft starters
- Temperature control
- Professional light dimming

Reverse blocking  -  Off-state

Device Type VRRM (1) VDRM (1) VRSM (1)
YZPST MFC200 1600 V 1600 V 1700 V

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off-state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive reverse  and off-state peak leakage current IRRM, IDRM 70 mA (3)
Critical rate of  rise of off-state voltage dv/dt 1000 V/µs (4)
Conducting
Parameter Symbol Min Max Typ Unit Conditions
Average on-state / forward current ITAV, IFAV 216 A 50 Hz sine wave,180o conduction,
Tc = 85 °C
RMS on-state / forward current ITRMS, IFRMS 340 A 50 Hz sine wave,180° conduction,
Tc = 85 °C
Surge non repetitive current ITSM, IFSM 6.8 kA 50 Hz sine wave
Half cycle
I squared t I2 t 231 kA2s VR = 0
Tj = Tjmax
Peak on-state / forward voltage VTM, VFM 1.1 V On-state current 200 A, Tj = Tjmax
Threshold voltage VT(TO) 0.8 V Tj = Tjmax
On-state slope resistance rT 1.4 Tj = Tjmax
Holding current IH 150 mA Tj = 25 °C
Latching current IL 200 mA Tj = 25 °C
Critical rate of rise of on-state current di/dt 500 A/µs IG = 5 IGT,  tr= 1 µs, Tj = Tjmax,  non rep.
RMS isolation voltage VINS 3000 V AC 50 Hz, 60 s
Triggering
Parameter Symbol Min Max Typ Unit Conditions
Gate current IGT 150 mA VD = 6 V; RL  = 6 Ω; Tj = 25 °C
Gate voltage VGT 2 V VD = 6 V; RL  = 6 Ω; Tj = 25 °C

OUTLINE AND DIMENSIONS

OUTLINE AND DIMENSIONS


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