YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Module Devices> Thyristor Module> Equiv to MOSFET module IXFN38N100Q2 1000V
Equiv to MOSFET module IXFN38N100Q2 1000V
Equiv to MOSFET module IXFN38N100Q2 1000V
Equiv to MOSFET module IXFN38N100Q2 1000V
Equiv to MOSFET module IXFN38N100Q2 1000V
Equiv to MOSFET module IXFN38N100Q2 1000V
Equiv to MOSFET module IXFN38N100Q2 1000V

Equiv to MOSFET module IXFN38N100Q2 1000V

$33.7510-49 Bag/Bags

$29≥50Bag/Bags

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Min. Order:10 Bag/Bags
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-IXFN38N100Q2

BrandYZPST

VDSS1000V 

VGS±30V

ID2538A

PD890W

VGS(th)5.0V(max.)

Product Description

Power MOSFET

YZPST-IXFN38N100Q2

N-Channel Enhancement Mode

Avalanche Rated, Low Qg , Low Intrinsic R g

High dV/dt, Low trr

YZPST-IXFN38N100-1
Product parameters
Symbol
Test Conditions
Maximum Ratings
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
VDSS
TJ = 25°C to 150°C
1000V 
VGS
Continuous
±30V
ID25
TC = 25°C
38A
EAR
TC = 25°C
60mJ
PD
TC = 25°C
890W
VGS(th)
VDS = VGS, ID = 8mA
5.0V(max.)
IDSS
VDS = VDSS TJ= 25°C
50mA
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
7200pF
QG(on)
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
250nC
TJ
﹣55℃~150℃
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC

Features

  • Double metal process for low

gate resistance

  • miniBLOC, with Aluminium nitride

 isolation

  • Unclamped Inductive Switching (UIS)

 rated

  • Low package inductance
  • Fast intrinsic Rectifier

Applications

  • DC-DC converters
  • Switched-mode and resonant-mode

power supplies

  • DC choppers
  • Pulse generators

Advantages

  • Easy to mount
  • Space savings
  • High power density
YZPST-IXFN38N100-2
YZPST-IXFN38N100-3



Home> Products> Semiconductor Module Devices> Thyristor Module> Equiv to MOSFET module IXFN38N100Q2 1000V
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