KP800A Disc Thyristor 1800v
Get Latest Priceنوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حمل و نقل: | Ocean,Air |
بندر: | Shanghai |
نوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حمل و نقل: | Ocean,Air |
بندر: | Shanghai |
مدل شماره: YZPST-KP800A 1800V
نام تجاری: YZPST
Phase Control Thyristor
YZPST-KP800A1800V
Phase Control Thyristor 1900V is widely used in all kinds of electronic equipment and electronic products. It is used for controlled rectifier, inverter, frequency conversion, voltage regulation and contactless switch.Household electrical appliances in the dimming light, speed fan, air conditioner, TV sets, refrigerators, washing machines, cameras, combined sound, light and sound circuit, time controller, toy device, wireless remote control, camera, and the thyristor device is widely used in industrial control, etc.
Thyristor |
Ratings |
||||||
Symbol |
Definition |
Conditions |
|
min. |
typ. |
max. |
Unit |
V EQ \F(RSM,DSM) |
max. non-repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
1900 |
V |
|
V EQ \F(RRM,DRM) |
max. repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
1800 |
V |
|
VT |
On-state voltage |
IT=1500 A |
TJ = 25°C |
|
|
1.70 |
V |
IT(AV) |
average forward current |
TC=25°C |
|
|
|
800 |
A |
IT(RMS) |
RMS forward current |
180° sine |
|
|
|
2214 |
A |
RthJC |
thermal resistance junction to case |
|
|
|
|
|
K/W |
RthCH |
thermal resistance case to heatsink |
|
|
|
|
|
K/W |
RthJK |
thermal resistance junction to heatsink |
|
|
|
|
0.032 |
K/W |
ITSM |
max. forward surge current |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
12.7 |
kA |
I²t |
value for fusing |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
806 |
kA²s |
di/dt |
Rate of rise of on-state current |
TJ = 125°C; f = 50 Hz tP=200µs;diG/dt=0.15A/µs; IG=0.15A;VD= ⅔VDRM |
repetitive |
|
|
500 |
A/µs |
non-repet |
|
|
1000 |
A/µs |
|||
dv/dt |
Maximum linear rate of rise of off-state voltage |
VD= ⅔VDRM RGK =∞; method 1 (linear voltage rise) |
TJ = 125°C |
|
|
1000 |
V/µs |
VGT |
gate trigger voltage |
VD = 6V |
TJ = 25°C |
|
|
3.0 |
V |
IGT |
gate trigger current |
VD = 6V |
TJ = 25°C |
|
|
300 |
mA |
IL |
latching current |
|
TJ = 25°C |
|
|
|
A |
IH |
holding current |
|
TJ = 25°C |
|
|
500 |
mA |
tgd |
gate controlled delay time |
|
TJ = 25°C |
|
|
2.5 |
µs |
tq |
Turn-off time |
VR=10 V; IT=20A; VD=⅔VDRM |
TJ = 150°C |
|
200 |
400 |
µs |
Tstg |
storage temperature |
|
|
-40 |
|
125 |
°C |
TJ |
virtual junction temperature |
|
|
-40 |
|
125 |
°C |
Wt |
Weight |
|
|
|
|
|
g |
F |
mounting force |
|
|
10 |
|
20 |
kN |
Outline Drawing
بیانیه حفظ حریم خصوصی: حریم خصوصی شما برای ما بسیار مهم است. شرکت ما قول می دهد که اطلاعات شخصی شما را برای هرگونه مجوزهای صریح خود برای هرگونه گسترش فاش نکند.
اطلاعات بیشتری را پر کنید تا بتواند سریعتر با شما در تماس باشد
بیانیه حفظ حریم خصوصی: حریم خصوصی شما برای ما بسیار مهم است. شرکت ما قول می دهد که اطلاعات شخصی شما را برای هرگونه مجوزهای صریح خود برای هرگونه گسترش فاش نکند.