High Power Thyristor Phase Control
Get Latest Priceنوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حمل و نقل: | Ocean,Air |
بندر: | SHANGHAI |
نوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حمل و نقل: | Ocean,Air |
بندر: | SHANGHAI |
مدل شماره: YZPST-KP738LT
نام تجاری: YZPST
نوع بسته بندی | : | 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging |
دانلود | : |
High Power Thyristor Phase Control
PST-KP738LT
Features: . All Diffused Structure . Linear Amplifying Gate Configuration . Blocking capabilty up to 2200 volts
. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
Conducting - on state
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
3200 |
|
A |
Sinewave,180o conduction,Ths=85oC |
Peak one cpstcle surge (non repetitive) current |
ITSM |
|
45000
41500 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
8.5x106 |
|
A2s |
10.0 msec |
Latching current |
IL |
|
400 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
100 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
1.30 |
|
V |
ITM = 2000 A; Duty cpstcle £ 0.01% Tj = 25 oC |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
150 |
|
A/ms |
Switching from VDRM£ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
100 |
|
A/ms |
Switching from VDRM£ 1000 V |
ELECTRICAL CHARACTERISTICS AND RATINGS
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
15 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 200 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
0.30 |
5 4
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
15 |
|
V |
|
Dynamic
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
3.0 |
2.5 |
ms |
ITM = 50 A; VD = 1500 V Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) |
tq |
|
400
|
250 |
ms |
ITM > 2000 A; di/dt = 10 A/ms; VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cpstcle ³ 0.01% |
Reverse recovery current |
Irr |
|
200 |
|
A |
ITM > 2000 A; di/dt = 10 A/ms; VR³ -50 V |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.012
|
|
oC/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.002
|
|
oC/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
8000 35.5 |
10000 44.4 |
|
lb. kN |
|
Weight |
W |
|
|
3.5 1.60 |
Lb. Kg. |
|
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data
CASE OUTLINE AND DIMENSIONS
بیانیه حفظ حریم خصوصی: حریم خصوصی شما برای ما بسیار مهم است. شرکت ما قول می دهد که اطلاعات شخصی شما را برای هرگونه مجوزهای صریح خود برای هرگونه گسترش فاش نکند.
اطلاعات بیشتری را پر کنید تا بتواند سریعتر با شما در تماس باشد
بیانیه حفظ حریم خصوصی: حریم خصوصی شما برای ما بسیار مهم است. شرکت ما قول می دهد که اطلاعات شخصی شما را برای هرگونه مجوزهای صریح خود برای هرگونه گسترش فاش نکند.