Low inductance case 600HFX170C6S 1700V 600A IGBT Module

Low inductance case 600HFX170C6S 1700V 600A IGBT Module

$1905-99 Piece/Pieces

$140≥100Piece/Pieces

نوع پرداخت:	L/C,Paypal,T/T
اینکوترم:	FOB,CFR,CIF
حمل و نقل:	Ocean,Land,Express,Others
بندر:	SHANGHAI

Option:

VCES:1700V
ICM:1200A
VRRM:1700V
IF:600A
VGES:±20V
PD:4166W

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توضیحات محصول

ویژگی های محصول

مدل شماره: YZPST-600HFX170C6S

نام تجاری: YZPST

Place Of Origin: China

VCES: 1700V

VGES: ±20V

ICM: 1200A

PD: 4166W

VRRM: 1700V

IF: 600A

IFM: 1200A

Packaging & Delivery

فروش واحد	:	Piece/Pieces
نوع بسته بندی	:	1. Anti-electrostatic packaging 2. Carton box 3. braid
مثال تصویر	:
دانلود	:

IGBT Module GD600HFX170C6S

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توضیحات محصول

IGBT Module YZPST-600HFX170C6S

1700V/600A 2 in one-package

General Description
IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

YZPST-GD600HFX170C6S
Features
. Low VCE(sat) Trench IGBT technology
. 10μs short circuit capability
. VCE(sat) with positive temperature coefficient
. Maximum junction temperature 175oC
. Low inductance case
. Fast & soft reverse recovery anti-parallel FWD
. Isolated copper baseplate using DBC technology

Typical Applications
. Inverter for motor drive
. AC and DC servo drive amplifier
. Uninterruptible power supply

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current TC=25oC TC= 100oC	1069 600	A
ICM	Pulsed Collector Current tp=1ms	1200	A
PD	Maximum Power Dissipation T =175oC	4166	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	600	A
IFM	Diode Maximum Forward Current tp=1ms	1200	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
		IC=600A,VGE=15V, Tj=25oC		1.85	2.2
		IC=600A,VGE=15V, Tj=25oC		1.85	2.2
VCE(sat)	Collector to Emitter	IC=600A,VGE=15V, Tj=125oC		2.25		V
	Saturation Voltage	IC=600A,VGE=15V, Tj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC= 12.0mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off	VCE=VCES,VGE=0V,			5	mA
ICES	Current	Tj=25oC			5	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			1.3		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz,		72.3		nF
Cres	Reverse Transfer	VGE=0V		1.75		nF
Cres	Capacitance			1.75		nF
QG	Gate Charge	VGE=- 15…+15V		5.66		μC
td(on)	Turn-On Delay Time			170		ns
tr	Rise Time			67		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj=25oC		527		ns
tf	Fall Time			138		ns
Eon	Turn-On Switching			154		mJ
Eon	Loss			154		mJ
Eoff	Turn-Off Switching			132		mJ
Eoff	Loss			132		mJ
td(on)	Turn-On Delay Time			168		ns
tr	Rise Time			80		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 125oC		619		ns
tf	Fall Time			196		ns
Eon	Turn-On Switching			236		mJ
Eon	Loss			236		mJ
Eoff	Turn-Off Switching			198		mJ
Eoff	Loss			198		mJ
td(on)	Turn-On Delay Time			192		ns
tr	Rise Time			80		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 150oC		640		ns
tf	Fall Time			216		ns
Eon	Turn-On Switching			259		mJ
Eon	Loss			259		mJ
Eoff	Turn-Off Switching			215		mJ
Eoff	Loss			215		mJ
		tP≤10μs,VGE=15V,
ISC	SC Data	Tj=150oC,VCC= 1000V, VCEM≤1700V		2400		A