High short circuit capability 650V IGBT Power Module 200A
$3310-99 Piece/Pieces
$25≥100Piece/Pieces
نوع پرداخت: | L/C,Paypal |
اینکوترم: | FOB,CFR,CIF |
حمل و نقل: | Ocean,Land |
بندر: | SHANGHAI |
مدل شماره: YZPST-SKM195GB066D
نام تجاری: YZPST
Place Of Origin: China
VCES: 650V
IC: 200A
ICRM: 400A
VGES: ±20V
Ptot: 695W
فروش واحد | : | Piece/Pieces |
نوع بسته بندی | : | 1. Anti-electrostatic packaging 2. Carton box 3. braid |
مثال تصویر | : | |
دانلود | : |
IGBT Power Module Type:YZPST-SKM195GB066D
Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Soft switching welding machine
Features
Low Vce(sat) with Trench Field-stop technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Maximum junction temperature 175℃
Absolute Maximum Ratings
Parameter |
Symbol |
Conditions |
Value |
Unit |
Collector-Emitter Voltage |
VCES |
VGE=0V, IC =1mA, Tvj=25℃ |
650 |
V |
Continuous Collector Current |
IC |
Tc=100℃ |
200 |
A |
Peak Collector Current |
ICRM |
tp=1ms |
400 |
A |
Gate-Emitter Voltage |
VGES |
Tvj=25℃ |
±20 |
V |
Total Power Dissipation (IGBT-inverter) |
Ptot |
Tc=25℃ Tvjmax=175℃ |
695 |
W |
IGBT Characteristics
Parameter
Value
Unit
Symbol
Conditions
Min.
Typ.
Max.
Gate-Emitter Threshold Voltage
VGE(th)
VGE=VCE, IC =3.2mA,Tvj=25℃
5.1
5.8
6.3
V
VCE=650V,VGE=0V, Tvj=25℃
1
mA
Collector-Emitter Cut-off Current
ICES
VCE=650V,VGE=0V, Tvj=125℃
5
mA
Collector-Emitter
Ic=200A,VGE=15V, Tvj=25℃
1.45
1.95
V
Saturation Voltage
VCE(sat)
Ic=200A,VGE=15V, Tvj=125℃
1.65
V
Input Capacitance
Cies
VCE=25V,VGE =0V,
12.3
nF
Reverse Transfer Capacitance
Cres
f=1MHz, Tvj=25℃
0.37
nF
Internal Gate Resistance
Rgint
1
Ω
Turn-on Delay Time
td(on)
48
Ns
Rise Time
tr
IC =200 A
48
Ns
Turn-off Delay Ttime
td(off)
VCE =300 V
348
Ns
Fall Time
tf
VGE = ±15V
58
Ns
Energy Dissipation During Turn-on Time
Eon
RG = 3.6Ω
2.32
mJ
Energy Dissipation During Turn-off Time
Eoff
Tvj=25℃
5.85
mJ
Turn-on Delay Time
td(on)
48
Ns
Rise Time
tr
IC =200 A
48
Ns
Turn-off Delay Time
td(off)
VCE = 300V
364
Ns
Fall Time
tf
VGE = ±15V
102
Ns
Energy Dissipation During Turn-on Time
Eon
RG =3.6Ω
3.08
mJ
Energy Dissipation During Turn-off Time
Eoff
Tvj=125℃
7.92
mJ
SC Data
Isc
Tp≤10us,VGE=15V,Tvj=150℃ , Vcc=300V,VCEM≤650V
1000
A
Diode Characteristics
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Diode DC Forward Current | IF | Tc=100℃ | 200 | A | ||
Diode Peak Forward Current | IFRM | 400 | A | |||
IF=200A,Tvj=25℃ | 1.55 | 1.95 | V | |||
Forward Voltage | VF | IF=200A,Tvj=125℃ | 1.5 | V |
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Recovered Charge | Qrr | 8.05 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 148 | A | ||
Reverse Recovery Energy | Erec | Tvj=25℃ | 1.94 | mJ | ||
Recovered Charge | Qrr | 16.9 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 186 | A | ||
Reverse Recovery Energy | Erec | Tvj=125℃ | 3.75 | mJ |
Module CharacteristicsTC=25°C unless otherwise specified
Parameter | Symbol | Conditions | Value | Unit | ||
Min. | Typ. | Max. | ||||
Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
Operating Junction Temperature | Tvj op | -40 | 125 | ℃ | ||
Storage Temperature | Tstg | -40 | 125 | ℃ | ||
per IGBT-inverter | 0.19 | K/W | ||||
Junction-to Case | R θjc | per Diode-inverter | 0.31 | K/W | ||
Case to Sink | R θcs | Conductive grease applied | 0.085 | K/W | ||
Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N · m | |
Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N · m | |
Weight of Module | G | 150 | g |
Package Dimensions
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بیانیه حفظ حریم خصوصی: حریم خصوصی شما برای ما بسیار مهم است. شرکت ما قول می دهد که اطلاعات شخصی شما را برای هرگونه مجوزهای صریح خود برای هرگونه گسترش فاش نکند.