Field Stop IGBT Technology 650V 100A IGBT Module
$2850-499 Piece/Pieces
$21≥500Piece/Pieces
نوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حمل و نقل: | Ocean,Land |
بندر: | SHANGHAI |
$2850-499 Piece/Pieces
$21≥500Piece/Pieces
نوع پرداخت: | L/C,T/T,Paypal |
اینکوترم: | FOB,CFR,CIF |
حمل و نقل: | Ocean,Land |
بندر: | SHANGHAI |
مدل شماره: YZPST-G100HF65D1
نام تجاری: YZPST
Place Of Origin: China
VCES: 650V
VGES: ±30V
IC TC = 25°C: 200A
IC TC = 100°C: 100A
ICM: 200A
PD: 390W
Tsc: >10µs
650V 100A IGBT Module YZPST-G100HF65D1
Features:
650V100A,VCE(sat)(typ.)=1.80V
Low inductive design
Lower losses and higher energy
Field Stop IGBT Technology
Excellent short circuit ruggedness
General Applications:
Auxiliary lnverter
Inductive Heating and Welding
Solar Applications
UPS Systems
Absolute Maximum Ratings of IGBT
VCES | Collector to Emitter Voltage | 650 | V | |
VGES | Continuous Gate to Emitter Voltage | ±30 | V | |
TC = 25°C | 200 | |||
IC | Continuous Collector Current | TC = 100°C | 100 | A |
ICM | Pulse Collector Current | TJ = 150°C | 200 | A |
PD | Maximum Power Dissipation (IGBT) | TC = 25°C, | 390 | W |
TJ = 150°C | ||||
tsc | Short Circuit Withstand Time | > 10 | µs | |
TJ | Maximum IGBT Junction Temperature | 150 | °C | |
TJOP | Maximum Operating Junction Temperature Range | -40 to +150 | °C | |
Tstg | Storage Temperature Range | -40 to +125 | °C |
Absolute Maximum Ratings of Freewheeling Diode
VRRM | Repetitive Peak Reverse Voltage Preliminary Data | 650 | V | |
Diode Continuous Forward Current | TC = 25°C | 200 | ||
IF | Diode Continuous Forward Current | TC = 100°C | 100 | A |
IFM | Diode Maximum Forward Current | 200 | A |
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter | Test Conditions | Min | Typ | Max | Unit | ||
BVCES | Collector to Emitter Breakdown Voltage | VGE = 0V, IC = 1mA | 650 | V | |||
ICES | Collector to Emitter | VGE = 0V,VCE = VCES | 1 | mA | |||
Leakage Current | |||||||
IGES | Gate to Emitter Leakage Current | VGE = ±30V, VCE = 0V | 200 | nA | |||
VGE(th) | Gate Threshold Voltage | IC = 1mA, VCE = VGE | 4.5 | 5.5 | V | ||
TJ = 25°C | 1.8 | 2 | |||||
VCE(sat) | Collector to Emitter Saturation Voltage (Module Level) | IC = 100A, VGE = 15V | TJ = 125°C | 2 | V |
Switching Characteristics of IGBT
td(on) | Turn-on Delay Time | TJ = 25°C | 60 | ns | |||
tr | Turn-on Rise Time | TJ = 25°C | 55 | ns | |||
td(off) | Turn-off Delay Time | VCC = 400V | TJ = 25°C | 210 | ns | ||
tf | Turn-off Fall Time | IC = 100A | TJ = 25°C | 65 | ns | ||
Eon | Turn-on Switching Loss | RG = 10Ω | TJ = 25°C | 1.2 | mJ | ||
Eoff | Turn-off Switching Loss | VGE = ±15V | TJ = 25°C | 1 | mJ | ||
Qg | Total Gate Charge | Inductive Load | TJ = 25°C | 500 | nC | ||
Rgint | Integrated gate resistor | f = 1M; | TJ = 25°C | 6.9 | Ω | ||
Vpp = 1V | |||||||
Cies | Input Capacitance | TJ = 25°C | 3.9 | ||||
VCE = 25V | |||||||
Coes | Output Capacitance | VGE = 0V | TJ = 25°C | 0.35 | nF | ||
Cres | Reverse Transfer | f = 1MHz | TJ = 25°C | 0.25 | |||
Capacitance | |||||||
RθJC | Thermal Resistance, Junction-to-Case (IGBT) | 0.32 | °C/W |
Electrical and Switching Characteristics of Freewheeling Diode
VF | TJ = 25°C | 1.35 | |||||
Diode Forward Voltage | IF = 100A , | V | |||||
VGE = 0V | TJ = 125°C | 1.2 | |||||
trr | Diode Reverse Recovery Time | IF = 100A, | TJ = 25°C | 80 | ns | ||
Irr | Diode Peak Reverse Recovery Current | di/dt = 550A/µs, Vrr = 400V, | TJ = 25°C | 30 | A | ||
Qrr | Diode Reverse Recovery Charge | TJ = 25°C | 6.2 | uC | |||
RθJC | Thermal Resistance, Junction-to-Case (Diode) | 0.75 | °C/W |
Module Characteristics
Parameter |
Min. |
Typ. |
Max. |
Unit |
|
Viso |
Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute |
2500 |
|
|
V |
RθCS |
Case-To-Sink(Conductive Grease Applied) |
|
0.1 |
|
°C/W |
M |
Power Terminals Screw: M5 |
3.0 |
|
5.0 |
N·m |
M |
Mounting Screw: M6 |
4.0 |
|
6.0 |
N·m |
G |
Weight |
|
160 |
|
g |
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اطلاعات بیشتری را پر کنید تا بتواند سریعتر با شما در تماس باشد
بیانیه حفظ حریم خصوصی: حریم خصوصی شما برای ما بسیار مهم است. شرکت ما قول می دهد که اطلاعات شخصی شما را برای هرگونه مجوزهای صریح خود برای هرگونه گسترش فاش نکند.