800V BTA216B-800B triac suitable for general purpose AC switching
$0.183000-9999 Piece/Pieces
$0.15≥10000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Transportation: | Ocean,Land,Air,Others |
Port: | SHANGHAI |
$0.183000-9999 Piece/Pieces
$0.15≥10000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Transportation: | Ocean,Land,Air,Others |
Port: | SHANGHAI |
Model No.: YZPST-BTA216B-800B
Brand: YZPST
Place Of Origin: China
IT(RMS): 16A
VDRM: 800V
VRRM: 800V
IGT: ≤10mA
Di/dt: 100A/μs
IGM: 2A
VGM: 5W
PGM: 5W
Selling Units | : | Piece/Pieces |
Package Type | : | 1. Anti-electrostatic packaging 2. Carton box 3. braid |
Download | : |
Due to separation glass passivation, these devices have good performance at dv/dt and reliability. The Triac series is suitable for general purpose AC switching. They can be used as an On-Off function in the applications such as static relays, heating regulation, or for phase control operation in light dimmers, motor speed controllers.
MAIN FEATURES
Symbol | Value | Unit |
IT(RMS) | 16 | A |
VDRM/VRRM | 600/800 | V |
IGT | ≤10 | mA |
Symbol | PARAMETER | Value | Unit | |
IT(RMS) | RMS on-state current(full sine wave) | TO-263.Non-Ins TC≤99℃ | 16 | A |
Non repetitive surge peak on-state current | t=20ms | 140 | ||
ITSM | (full sine wave, Tj=25℃) | t= 16.7ms | 150 | A |
I2t | I2t Value for fusing | t= 10ms | 98 | A2S |
di/dt | Repetitive rate of rise of on-state Current after triggering | ITM = 20 A; IG = 0.2 A dIG/dt = 0.2 A/us | 100 | A/μs |
IGM | Peak gate current, | — | 2 | A |
VGM | Peak gate voltage | — | 5 | W |
PGM | Peak gate power | — | 5 | W |
PG(AV) | Average gate power | over any 20 ms period | 0.5 | W |
Tstg | Storage junction temperature range | -40 to +150 | ℃ | |
Tj | Operating junction temperature range | 125 | ℃ |
Symbol | Parameter | Test Condition | Quadrant | Value | Unit | ||
MIN | TYPE | MAX | |||||
IGT | Gate trigger current | VD= 12V, IT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 10 | mA |
VD= 12V, IT=0. 1A | - | 0.7 | 1.5 | ||||
VGT | Gate trigger voltage | VD=400V, IT=0. 1A,Tj= 125°C | 0.25 | 0.4 | - | V | |
VT | On-state voltage | IT=20A | - | 1.2 | 1.5 | V | |
IH | Holding current | VD= 12V, IGT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | mA | |
Ⅰ-Ⅲ | - | - | 60 | mA | |||
IL | Latching current | VD= 12V, IGT=0. 1A | Ⅱ | - | - | 90 | mA |
ID | Off-state leakage current | VD = VDRM(max); Tj= 125 ˚C | - | 0.1 | 0.5 | mA |
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