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Home > Products > Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor > C712L thyristor power controller KT55CT

C712L thyristor power controller KT55CT
C712L thyristor power controller KT55CT
C712L thyristor power controller KT55CT
C712L thyristor power controller KT55CT

C712L thyristor power controller KT55CT

Unit Price: USD 40 - 80 / Piece/Pieces
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Min. Order: 1 Piece/Pieces
Delivery Time: 30 Days
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Basic Info

    Model No.: YZPST-C712L

    Type: Intrinsic Semiconductor

    VRRM: 2000V

    VDRM: 2000V

    VRSM: 2100V

    IRRM / IDRM: 20 MA/90 MA

    DV/dt: 800 V/sec

Additional Info

    Productivity: 1000

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 500

    Certificate: ISO9001-2008,ROHS

    HS Code: 85413000

    Port: Shanghai

Product Description

HIGH Power Thyristor For Inverter AND CHOPPER APPLICATIONS

YZPST-C712L

Features:

. All Diffused Structure

. Center Amplifying Gate Configuration

. Blocking capabilty up to 2100 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device


Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

2000

2000

2100

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

20 mA

90 mA (3)

Critical rate of voltage rise

dV/dt (4)

800 V/msec

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

waveshape to 80% rated VDRM. Gate open.

Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit,

comprising a 0.2 mF capacitor and 20 ohms

resistance in parallel with the thristor under

test.

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

1185

A

Sinewave,180o conduction,Tc=80oC

RMS value of on-state current

ITRMS

1700

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

18500

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

1.66x106

A2s

8.3 msec and 10.0 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

-

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

1.45

V

ITM = 1000 A; Duty Cycle £ 0.01%; Tj =1 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

800

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

200

A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

100

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

-

120

-

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

-

3.0

-

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

20

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

-

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

40

-

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

*

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V

HERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+125

oC

Thermal resistance - junction to case

RQ (j-c)

0.023

-

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

0.0075

-

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

22.2

26.6

kN

Weight

W

-

g

About

YZPST-C712L




Looking for ideal C712L Power Thyristor Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the C712L Thyristor Power Controller are quality guaranteed. We are China Origin Factory of Power Thyristor KT55CT. If you have any question, please feel free to contact us.

Product Categories : Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor

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Mr. John chang

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