YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Bi Directions Thyristor (Triac)> Single mesa structure TO-220F 600V BT152X-600R triac
Single mesa structure TO-220F 600V BT152X-600R triac
Single mesa structure TO-220F 600V BT152X-600R triac
Single mesa structure TO-220F 600V BT152X-600R triac
Single mesa structure TO-220F 600V BT152X-600R triac
Single mesa structure TO-220F 600V BT152X-600R triac
Single mesa structure TO-220F 600V BT152X-600R triac
Single mesa structure TO-220F 600V BT152X-600R triac
Single mesa structure TO-220F 600V BT152X-600R triac

Single mesa structure TO-220F 600V BT152X-600R triac

$0.184000-19999 Piece/Pieces

$0.14≥20000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Land,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-BT152X-600R

BrandYZPST

Place Of OriginChina

IT (RMS)20A

VRRM600V

IT(AV)13A

ITSM200A

IGM4A

PGM5W

PG(AV)1W

Tstg-40--+150℃

Tj-40--+125℃

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. braid
Download :
TRIAC BT152X-600R TO220F
Product Description

BT152-600R/800R

Single mesa structure TO-220F 600V BT152X-600R triac

YZPST-BT152X-600R

●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back   (anode)   electrode metal: Ti-Ni-Ag
The high ability of   current shock resistance
●The main purposes
Alternating current switch,
AC DC power converter,
The control of electric heating
Motor speed control
● Package
TO-220M1    TO-220F

YZPST-BT152X-600R

Main    Feature (Tj=25℃)

Symbol Value Unit
IT (RMS) 20 A
VDRM   VRRM 600/800 V
IGT 200 uA

Absolute ratings (Limiting Values)

Symbol Parameter Value Unit
IT (RMS) RMS on-state current (180 °conduction angle) 20 A
IT(AV) AV on-state current (180 °conduction angle) 13 A
ITSM Non repetitive surge peak on-state 200 A
Current (tp=10ms)
IGM Peak gate current(tp=20us) 4 A
PGM Peak gate power 5 W
PG(AV) Average gate power 1 W
Tstg Storage temperature 110
Tj Operating junction temperature 85

Thermai Resistances

Symbol Parameter Value Unit
TO-220M1 2.2
Rth (j-c) Junction to case TO-220F 2.5 /W

Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol Test Conditions Value Unit
Min Type Max
IGT VD=12V, RL=33Ω ---- 5 25 mA
VGT VD=12V, RL=33Ω ----- ----- 1.3 V
VGD VD=VDRMRL=3.3KΩRGK=1KΩ,Tj=125℃ 0.2 ----- ----- V
IH IT=500mA ----- ----- 30 mA
IL IG=1.2IGT ----- ----- 60 mA
dV/dt VD=67%VDRMGateOpen Tj=110℃ 500 v/ μs
----- -----
VTM IT=30A,tp=380 μs ----- ----- 1.6 V
dI/dt IG=2IGT 50 ----- ----- A/μs
I2T Tp=10ms ----- ----- 200 A2S
Tj=25℃ ----- ----- 10 μA
IDRM VD=VDRM Tj=125℃ ----- ----- 1 mA
Tj=25℃ ----- ----- 10 μA
IRRM VR=VRRM Tj=125℃ ----- ----- 1 mA

Measure of   package
((TO--220F))
TO-220

Home> Products> Semiconductor Plastic Package> Bi Directions Thyristor (Triac)> Single mesa structure TO-220F 600V BT152X-600R triac
苏ICP备05018286号-1
Send Inquiry
*
*

We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Send