40A BTA40-600B TG40C60 are isolated molded triacs
$2.6300-999 Piece/Pieces
$2.1≥1000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Transportation: | Ocean,Land,Express,Others |
Port: | SHANGHAI |
$2.6300-999 Piece/Pieces
$2.1≥1000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Transportation: | Ocean,Land,Express,Others |
Port: | SHANGHAI |
Model No.: YZPST-BTA40-600B TG40C60
Brand: YZPST
Place Of Origin: China
IT RMS: 40A
PG AV: 1W
ITSM: 400 A
I2t: 880A2S
PGM: 10W
IGM: 8A
VGM: 10V
Selling Units | : | Piece/Pieces |
Package Type | : | 1. Anti-electrostatic packaging 2. Carton box 3. braid |
Download | : |
TRIAC (ISOLATED TYPE)
YZPST-BTA40-600B TG40C60
TG40C/E/D are isolated molded triacs
suitable for wide range of applications like
copier, microwave oven, solid state switch,
motor control, light control and heater
control.
IT AV 40A
High surge capability 400A
Isolated Nounting AC2500V
Tab Terminals
Maximum Ratings
Symbol | Item | Conditions | Ratings | Unit |
IT RMS | R.M.S. On-State Current | Tc | 40 | A |
ITSM | Surge On-State Current | One cycle, 50Hz/, peak, non-repetitive | 400 | A |
I2t | I2t | Value for one cycle of surge current | 880 | A2S |
PGM | Peak Gate Power Dissipation |
| 10 | W |
PG AV | Average Gate Power Dissipation |
| 1 | W |
IGM | Peak Gate Current |
| 8 | A |
VGM | Peak Gate Voltage |
| 10 | V |
di/dt | Critical Rate of Rise of On-State Current | IG=100mA,Tj=25 VD=1/2VDRM dIG/dt=1A/μS | 50 | A/μS |
Tj | Operating Junction Temperature |
| -25~+125 | ℃ |
Tstg | Storage Temperature |
| -40~+125 | ℃ |
VISO | Isolation Breakdown Voltage R.M.S. | A.C.1 minute | 2500 | V |
| Mounting Torque M4 | Recommended Value 1.0 ~1.4(10~14) | 14 | kgf.CM |
Maximum Ratings
Tj=25 unless otherwise specified
Symbol | Item | Ratings | Unit | |||
TG40C60 | TG40C80 | TG40C100 | TG40C12 | V | ||
VDRM | Repetitive Peak Off-State Voltage | 600 | 800 | 1000 | 1200 | V |
Electrical Characteristics
Symbol | Item | Conditions | Ratings | Unit | |
IDRM | Reptitive Peak Off-State Current, max | VD=VDRM, Single phase, half wave, Tj=125℃ | 5 | mA | |
VTM | Peak On-State Voltage, max | On-State Current On-State Current √2X IT (RMS),Inst. measurement | 1.55 | V | |
I GT1 + | 1 | Gate Trigger Current, max | Tj =25℃, IT=1A, VD=6V | 50 | mA |
I GT1 - | 2 | Tj =25℃, IT=1A, VD=6V | 50 | mA | |
I GT3 + | 3 |
| - | mA | |
I GT3 + | 4 | Tj =25℃, IT=1A, VD=6V | 50 | mA | |
V GT1+ | 1 | Gate Trigger Voltage, max | Tj =25℃, IT=1A, VD=6V | 3 | V |
V GT1- | 2 | Tj =25℃, IT=1A, VD=6V | 3 | V | |
V GT3+ | 3 |
| - | V | |
V GT3- | 4 | Tj =25℃, IT=1A, VD=6V | 3 |
| |
VGD | Non-Trigger Gate Voltage, min | Tj =25℃, VD=1/2VRRM | 0.2 | V | |
tgt | Turn On Time, max. | IT=(RMS),IG=100mA,VD=1/2VDRM,Tj=25℃,dIG/dt=1A/μS | 10 | V | |
dv/dt | Critical Rate of Rise on-State Voltage,min. | Tj=25℃,VD=2/3VDRM Exoponential wave. | 500 | V/μS | |
(dv/dt) c | Critical Rate of Rise off-State Voltage at commutation, min | Tj=25℃,VD=2/3VDRM di/dtc=15A/μS | 5 | V/μS | |
IH | Holding Current, typ. | Tj =25℃ | 60 | mA | |
Rth(j-c) | Thermal Impedance, max | Junction to case | 0.9 | ℃/W |
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