YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Bi Directions Thyristor (Triac)> High ability 25A BTB24-1200WRG TO-263 1200V triac
High ability 25A BTB24-1200WRG TO-263 1200V triac
High ability 25A BTB24-1200WRG TO-263 1200V triac
High ability 25A BTB24-1200WRG TO-263 1200V triac
High ability 25A BTB24-1200WRG TO-263 1200V triac
High ability 25A BTB24-1200WRG TO-263 1200V triac
High ability 25A BTB24-1200WRG TO-263 1200V triac

High ability 25A BTB24-1200WRG TO-263 1200V triac

$0.22000-19999 Piece/Pieces

$0.16≥20000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Land,Express,Others
Port:SHANGHAI
Product Attributes

Model No.YZPST-BTB24-1200WRG

BrandYZPST

Place Of OriginChina

IT(RMS)25A

VDRM1200V

VRRM1200V

VTM≤1.5A

Tstg-40~150℃

Tj-40~125℃

ITSM250A

I2t340A2s

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. braid
Download :
TRIAC BTB24-1200WRG TO-263
Product Description

BTA24/BTB24 Series 25A Triacs

YZPST-BTB24-1200WRG

DESCRIPTION:
With high ability to withstand the shock loading of Large current, BTA24/BTB24 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.

With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, BTA24 provides a rated insulation voltage of 2500 VRMS complying with UL standards

YZPST-BTA24-800BW


MAIN FEATURES:

symbol

value

unit

IT(RMS)

25

A

VDRM/VRRM

600/800/1200/1600

V

VTM

≤1.5

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~125

Repetitive peak off-state voltage (Tj=25)

VDRM

600/800/1200/1600

V

Repetitive peak reverse voltage (Tj=25)

VRRM

600/800/1200/1600

V

RMS on-state current

IT(RMS)

25

A

Non repetitive surge peak on-state current (full cycle, F=50Hz)

 

ITSM

 

250

 

A

I2t value for fusing (tp=10ms)

I2t

340

A2s

Critical rate of rise of on-state current(IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

Peak gate power

PGM

10

W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

3 Quadrants

Parameter Value
Test Condition Quadrant CW BW Unit
IGT VD=12V, 35 50 mA
VGT RL=33Ω - - MAX 1.3 V
VGD VD=VDRM - - MIN 0.2 V
IH IT=100mA MAX 60 80 mA
- 70 90
IL IG=1.2IGT MAX 80 100 mA
VD=2/3VDRM   Tj=125 Gate open
dV/dt MIN 1000 1500 V/ µs


4 Quadrants

Parameter Value
Test Condition Quadrant C B Unit
- - 25 50 mA
IGT VD=12V, 50 70 mA
VGT RL=33Ω ALL MAX 1.5 V
VGD VD=VDRM ALL MIN 0.2 V
IH IT=100mA MAX 60 75 mA
--  70 80
IL IG=1.2IGT MAX 90 100 mA
VD=2/3VDRM   Tj=125 Gate open
dV/dt MIN 200 500 V/ µs

THERMAL RESISTANCES

Symbol Test Condition Value Unit
TO-220A(Ins 1.5
TO-220F(Ins 1.6
TO-263 2.1 /W
Rth(j-c) junction to case(AC) TO-3P 0.68

PACKAGE MECHANICAL DATA

TO-263


Home> Products> Semiconductor Plastic Package> Bi Directions Thyristor (Triac)> High ability 25A BTB24-1200WRG TO-263 1200V triac
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