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Home> Products> Semiconductor Plastic Package> Bi Directions Thyristor (Triac)> High surge capability 400A TG-C package triac TG25C60
High surge capability 400A TG-C package triac TG25C60
High surge capability 400A TG-C package triac TG25C60
High surge capability 400A TG-C package triac TG25C60
High surge capability 400A TG-C package triac TG25C60
High surge capability 400A TG-C package triac TG25C60
High surge capability 400A TG-C package triac TG25C60
High surge capability 400A TG-C package triac TG25C60

High surge capability 400A TG-C package triac TG25C60

$5100-999 Piece/Pieces

$2.9≥1000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Land,Express,Others
Port:SHANGHAI
Product Attributes

Model No.YZPST-BTA25-600BW TG25C60

BrandYZPST

Place Of OriginChina

IT RMS25A

ITSM300/330A

I2t450A2S

PGM10W

PGAV1W

IGM3A

VGM10V

Di/dt50A/μS

Packaging & Delivery
Selling Units : Piece/Pieces
Picture Example :
Download :
TRIAC Module BTA25-600BW
Product Description

YZPST-TG25..SERIES

YZPST-BTA25-600BW TG25C60

TRIAC (ISOLATED TYPE)

TG25C/E/D are isolated molded triacs suitable for wide range of applications like copier, microwave oven, solid state switch,
motor control, light control and heater control.
IT AV 25A
High surge capability 400A
Isolated Nounting AC2500V
Tab Terminals
YZPST-BTA25-600BW

Tg CMaximum Ratings

Symbol

Item

Conditions

Ratings

Unit

IT RMS

R.M.S. On-State Current

Tc

25

A

ITSM

Surge On-State Current

One cycle, 50Hz/60Hz, peak, non-repetitive

300/330

A

I2t

I2t

Value for one cycle of surge current

450

A2S

PGM

Peak Gate Power Dissipation

 

10

W

PGAV

Average Gate Power Dissipation

 

1

W

IGM

Peak Gate Current

 

3

A

VGM

Peak Gate Voltage

 

10

V

di/dt

Critical Rate of Rise of On-State Current

IG=100mA,Tj=25   VD=1/2VDRM    dIG/dt=1A/μS

50

A/μS

Tj

Operating Junction Temperature

 

-25+125

Tstg

Storage Temperature

 

-40+125

VISO

Isolation Breakdown Voltage R.M.S.

A.C. 1 minute

2500

V

 

Mounting Torque M4

Recommended Value 1.0  1.41014

14

kgf.CM

Maximum Ratings

Tj=25 unless otherwise specified

Symbol Item Ratings Unit
TG25C60 TG25C80 TG25C100 TG25C12 V
VDRM Repetitive Peak Off-State Voltage 400 800 1000 1200 V
Electrical Characteristics

Symbol

Item

Conditions

Ratings

Unit

IDRM

Reptitive Peak Off-State

Current, max

VD=VDRM, Single phase, half wave, Tj=125

5

mA

VTM

Peak On-State Voltage, max

On-State Current On-State Current 2X IT (RMS),Inst. measurement

1.4

V

I GT1 +

1

Gate Trigger Current, max

Tj =25, IT=1A, VD=6V

50

mA

I GT1 -

2

Tj =25, IT=1A, VD=6V

50

mA

I GT3 +

3

 

-

mA

I GT3 +

4

Tj =25, IT=1A, VD=6V

50

mA

V GT1+

1

Gate Trigger Voltage, max

Tj =25, IT=1A, VD=6V

3

V

V GT1-

2

Tj =25, IT=1A, VD=6V

3

V

V GT3+

3

 

-

V

V GT3-

4

Tj =25, IT=1A, VD=6V

3

 

VGD

Non-Trigger Gate Voltage, min

Tj =25,   VD= 1/2VRRM

0.2

V

tgt

Turn On Time, max.

IT=(RMS),IG= 100mA,VD=1/2VDR M,Tj=25,dIG/dt=1A/μS

10

V

dv/dt

Critical Rate of Rise on-State

Voltage,min.

Tj=25,VD=2/3VDRM

Exoponential wave.

20

V/μS

(dv/dt) c

Critical Rate of Rise off-State

Voltage at commutation, min

Tj=25,VD=2/3VDRM

di/dtc=15A/μS

5

V/μS

IH

Holding Current, typ.

Tj =25

30

mA

Rth(j-c)

Thermal Impedance, max

Junction to case

1.5

℃/W

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