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Home > Products > Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor > High dV/dt capability 6500V high power thyristor

High dV/dt capability 6500V high power thyristor
High dV/dt capability 6500V high power thyristor
High dV/dt capability 6500V high power thyristor

High dV/dt capability 6500V high power thyristor

Unit Price: USD 150 - 95 / Piece/Pieces
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Min. Order: 1 Piece/Pieces
Delivery Time: 30 Days

Basic Info

    Model No.: YZPST-KP894A-6500V

    VRRM: 6500V

    VRSM: 6600V, 894A

    IT(RMS)m: 1404A

    1404A: 2.4V

Additional Info

    Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 1000

    Certificate: ISO9000

    HS Code: 85413000

    Port: SHANGHAI

Product Description


High Power Thyristor FOR PHASE CONTROL APPLICATIONS

YZPST-KP894A-6500V

Product Description

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration v

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

6500

6500

6600

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

20 mA

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

894

A

Sinewave,180o conduction,Tc=60oC

RMS value of on-state current

IT(RMS)m

1404

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

12

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

0.72x106

A2s

8.3 msec

Latching current

IL

3000

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

300

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

2.4

V

ITM = 1000 A ,Tj = 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

-

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

200

A/ms

Switching from VDRM £ 1000 V

YZPST-KP894A-6500V-1

Sym

A

B

C

D

H

mm

75

47

66

3.5×3

26±1


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Product Categories : Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor

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John chang

Mr. John chang

Tel:86-514-87782298

Fax:86-514-87782297

Mobile Phone:+8613805278321Contact me with Whatsapp

Email:info@yzpst.com

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