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100mA high voltage diode 2cl 15kv

Unit Price:

USD 1.5 / Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

100000 Piece/Pieces

Delivery Time:

30 Days

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Basic Info

Model No.: YZPST-2CL2J

Type: Intrinsic Semiconductor

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 1000

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2015,ROHS

HS Code: 85411000

Port: SHANGHAI

Product Description

High Frequency High Voltage Diode

YZPST - 2CL2J

Characteristics

1. High junction temperature up to 130℃

2. Low forward voltage drop, and small current leakage

3. Avalanche breakdown protection

4.Max reverse recovery time to---

5. Excellent properties against HV surge impact

6. Axial leading wires which are weldable

7. Epoxy package with anti-corrosion properties on surface

1.Main Specification

No.	Item	Symbol	Unit	Rating	Conditions
1	Repetitive Peak Reverse Voltage	VRRM	KV	12
2	Average Forward Current	IF (AV)	mA	500	Tamb=60 oC 50HZ Sine-half Wave Rectification Average Value
3	Forward Surge Current	IFSM	A	30	Tamb=25 oC 50HZ Sine-half Wave,One Shot
4	Reverse Surge Current	IRSM	μA	0.1	Pulse width 1ms triangle wave single pulse
5	Maximum Junction Temperature	Tjmax	oC	130
6	Storage Temperature	Tstg	oC	-40~+130

No.

Item

Symbol

Unit

Rating

Conditions

Repetitive Peak Reverse Voltage

VRRM

Average Forward Current

IF (AV)

500

Tamb=60 oC

50HZ Sine-half Wave

Rectification Average Value

Forward Surge Current

IFSM

Tamb=25 oC

50HZ Sine-half Wave,One Shot

Reverse Surge Current

IRSM

μA

0.1

Pulse width 1ms triangle wave single pulse

Maximum Junction Temperature

Tjmax

130

Storage Temperature

Tstg

-40~+130

2. Electric Specification

NO.	Item	Symbol	Unit	Rating	Test conditions
1	Forward Voltage Drop	VFM	V	25max	IFM=500mA
2	Normal Temperature Reverse Current	IRM1	μA	10max	VRM=12KV
3	High Temperature Reverse Current	IRM2	μA	10max	Tamb=100oC VRM=12KV
4	Reverse Breakdown Voltage	VZ	KV	12	IR=2A
5	Reverse Recovery Time	trr	nS	-	IF=2mA, IRM=4mA 90%

NO.

Item

Symbol

Unit

Rating

Test conditions

Forward Voltage Drop

VFM

25max

IFM=500mA

Normal Temperature Reverse Current

IRM1

μA

10max

VRM=12KV

High Temperature Reverse Current

IRM2

μA

10max

Tamb=100oC

VRM=12KV

Reverse Breakdown Voltage

IR=2A

Reverse Recovery Time

trr

IF=2mA, IRM=4mA 90%

(Tamb=25 oC, unless otherwise specified)

3. Application

For high voltage rectification;

4. Derating of Forward Current

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Product Categories : Semiconductor Plastic Package > Plastic Package Diode

100mA high voltage diode 2cl 15kv

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