| Unit Price: | USD 1.5 / Bag/Bags |
|---|---|
| Payment Type: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Min. Order: | 100000 Bag/Bags |
| Delivery Time: | 30 Days |
Model No.: YZPST-2CL2J
Type: Intrinsic Semiconductor
Productivity: 1000
Brand: YZPST
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85411000
Port: SHANGHAI
High Frequency High Voltage Diode
YZPST - 2CL2J
Characteristics
1. High junction temperature up to 130℃
2. Low forward voltage drop, and small current leakage
3. Avalanche breakdown protection
4.Max reverse recovery time to---
5. Excellent properties against HV surge impact
6. Axial leading wires which are weldable
7. Epoxy package with anti-corrosion properties on surface
1.Main Specification
|
No. |
Item |
Symbol |
Unit |
Rating |
Conditions |
| 1 | Repetitive Peak Reverse Voltage | VRRM | KV | 12 | |
| 2 | Average Forward Current |
IF (AV) |
mA |
500 | Tamb=60 oC 50HZ Sine-half Wave Rectification Average Value |
|
3 |
Forward Surge Current |
IFSM |
A |
30 | Tamb=25 oC 50HZ Sine-half Wave,One Shot |
|
4 | Reverse Surge Current |
IRSM | μA |
0.1 |
Pulse width 1ms triangle wave single pulse |
|
5 |
Maximum Junction Temperature
|
Tjmax |
oC |
130 | |
| 6 | Storage Temperature | Tstg |
oC | -40~+130 | |
2. Electric Specification
|
NO. |
Item |
Symbol | Unit |
Rating |
Test conditions |
| 1 | Forward Voltage Drop | VFM | V | 25max | IFM=500mA |
| 2 | Normal Temperature Reverse Current | IRM1 | μA | 10max | VRM=12KV |
| 3 | High Temperature Reverse Current | IRM2 | μA | 10max | Tamb=100oC VRM=12KV |
| 4 | Reverse Breakdown Voltage | VZ | KV | 12 |
IR=2A |
| 5 | Reverse Recovery Time | trr | nS | - | IF=2mA, IRM=4mA 90% |
(Tamb=25 oC, unless otherwise specified)
3. Application
For high voltage rectification;
4. Derating of Forward Current
Product Categories : Semiconductor Plastic Package > Plastic Package Diode
