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Home> Products> Semiconductor Plastic Package> Silicon Controlled Rectifier (SCR)> Silicon 90A High Frequency SCR with Price
Silicon 90A High Frequency SCR with Price
Silicon 90A High Frequency SCR with Price
Silicon 90A High Frequency SCR with Price

Silicon 90A High Frequency SCR with Price

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Incoterm:FOB,CFR,CIF
Transportation:Ocean,Air
Port:Shanghai
Product Attributes

Model No.YZPST-1690-TO-247S-2

BrandYZPST

Packaging & Delivery
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
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Product Description
PST1690 Series     90A SCRs

YZPST-1690-TO-247S

DESCRIPTION:

PST1690 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc


ABSOLUTE MAXIMUM RATINGS

 

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40-150

Operating junction temperature range

Tj

-40-125

Repetitive peak off-state voltage

VDRM

1600

V

Repetitive peak reverse voltage

VRRM

1600

V

Average on-state current (TC=80)

IT(AV)

56

A

RMS on-state current(TC=80)

IT(RMS)

90

A

Non repetitive surge peak on-state current

(tp=10ms)

 

ITSM

 

1250

 

A

I2t value for fusing (tp=10ms)

I2t

7800

A2s

Critical rate of rise of on-state current

(IG=2×IGT)

 

dI/dt

 

150

 

A/μs

Peak gate current

IGM

10

A

Peak gate power

PGM

20

W

Average gate power dissipation(Tj=125)

PG(AV)

2

W


ELECTRICAL CHARACTERISTICS
(Tj=25 unless otherwise specified)

 

Symbol

 

Test Condition

Value

 

Unit

MIN.

TYP.

MAX.

IGT

 

VD=12V RL=30Ω

10

-

80

mA

VGT

-

-

1.5

V

VGD

VD=VDRM Tj=125

0.25

-

-

V

IL

 

IG=1.2 IGT

-

-

200

mA

IH

 

IT=1A

-

-

150

mA

dV/dt

VD=2/3VDRM Tj=125 Gate Open

1000

-

-

V/μs

STATIC CHARACTERISTICS

Symbol

Parameter

Value(MAX)

Unit

VTM

ITM=110A tp=380μs

TC=25

1.8

V

IDRM

 

VD=VDRM VR=VRRM

TC=25

50

μA

IRRM

TC=125

10

mA

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth(j-c)

junction to case(DC)

0.27

/W


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