YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Silicon Controlled Rectifier (SCR)> NPN silicon power transistors 13005D
NPN silicon power transistors 13005D
NPN silicon power transistors 13005D
NPN silicon power transistors 13005D
NPN silicon power transistors 13005D
NPN silicon power transistors 13005D

NPN silicon power transistors 13005D

$0.122000-9999 Piece/Pieces

$0.08≥10000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-13005D

BrandYZPST

VCBO700V

VCEO400V

VEBO9V

IC3A

Icm6A

PTOT75W

Tj150℃

Tstg-55—150℃

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Download :
NPN silicon power transistors YZPST-13005D
Product Description

NPN SILICON POWER TRANSISTORS 13005D
●DESRCRIPTION:
The 13005D is an NPN transistor used in electronic ballasts and electronic energy saving -lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, high breakdown voltage and low reverse leakage.

Silicon Power Transistors

●ABSOLUTE MAX I MUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Continuous Collector Current

3

A

Icm

Collector Pulse CurrentTp5ms

6

A

PTOT

 

Total dissipation at Tcase=25 ℃

TO-126SD

50

W

TO-220

75

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55150

●ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

ICBO

Collector Cutoff Current

VCB= 700 VIE=0

 

 

0.1

mA

ICEO

Base Cutoff Current

VCE= 400 VIc=0

 

 

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 9 VIC=0

 

 

0.1

mA

VCBO

Collector-Base Breakdown Voltage

IC= 0.1mA

700

 

 

V

VCEO

Collector-Emitter Breakdown Voltage

IC= 0.1mA

400

 

 

V

VEBO

Emitter-Base Breakdown Voltage

IB= 0.1mA

9

 

 

V

hFE

DC Current Gain

IC= 0.5A,VCE= 5V

15

 

35

 

a

VCE sat

Collector-Base Breakdown Voltage

IC= 2A,IB= 0.5A

 

 

1

V

a

VBE sat

Base-Emitter Saturation Voltage

IC= 2A,IB= 0.5A

 

 

1.5

V

ts

Storage Time

UI9600Ic=0.5A

2

 

7

us

fT

Transition Frequency

VCE=10VIC=0.2A F=1MHz

5

 

 

MHz

aPulse Testtp 300usδ≤2%

●PACKAGE MECHANICAL DATA

Silicon Power TransistorsNPN Silicon Power Transistors

苏ICP备05018286号-1
Send Inquiry
*
*

We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Send