$0.0610000-49999 Piece/Pieces
$0.05≥50000Piece/Pieces
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| Incoterm: | FOB,CFR,CIF |
| Transportation: | Ocean,Land,Air |
| Port: | SHANGHAI |
Model No.: YZPST-BT151S-500R
Brand: YZPST
Place Of Origin: China
IT (RMS): 12A
IT(AV): 7.5A
ITSM: 100A
I2t: 50A2S
IGM: 2A
PGM: 5W
PG(AV): 0.5W
Tstg: -40--+150℃
Tj: -40--+125℃
| Selling Units | : | Piece/Pieces |
| Package Type | : | 1. Anti-electrostatic packaging 2. Carton box 3. braid |
| Download | : |
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P/N:YZPST-BT151S SCRS
Hot selling BT151S-500R TO-252 SCR
Package
TO-252-2L
Main Feature （Tj= 25℃）
| Symbol | Value | Unit |
| IT(AV) | 7.5 | A |
| VDRM / VRRM | ≥ 600 | V |
| IGT | 3to 6 | mA |
| Symbol | Parameter | Value | Unit |
| IT (RMS) | RMS on-state current (180 °conduction angle) | 12 | A |
| IT(AV) | AV on-state current (180 °conduction angle) | 7.5 | A |
| ITSM | Non repetitive surge peak on-state Current (tp= 10ms) | 100 | A |
| I2t | (tp= 10ms) | 50 | A2S |
| IGM | Peak gate current(tp=20us) | 2 | A |
| PGM | Peak gate power | 5 | W |
| PG(AV) | Average gate power | 0.5 | W |
| Tstg Tj | Storage temperature Operating junction temperature | -40--+150 -40--+125 | ℃ |
| Symbol | Parameter | Value | Unit |
| Rth (j-mb) | Junction to case | 2.0 | K/W |
| Rth (j-a) | Junction to ambient | 75 | K/W |
Symbol Test Conditions Value Unit Min Type Max IGT VD=6V, RL= 100Ω 3 5 6 uA VGT VD= 12V, RL= 100Ω ----- 0.7 0.8 V VGD VD=VDRM, RL=3.3KΩ Tj=110℃ 0.2 ----- ----- V IH IT= 100mA Gate Open ----- 10 mA IL IG= 1.2IGT 20 mA dV/dt VD=67%VDRM, GateOpen, Tj=125℃ 50 125 v/μs ----- VTM IT= 16A,tp=380μs ----- ----- 1.6 V IDRM VD=VDRM 10 μA 500 μA VR=VRRM Tj=25℃ ----- ----- 10 μA IRRM Tj=125℃ ----- ----- 500 μA
Measure of package
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