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TO-247 DC-AC converter Complementary NPN transistors

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    Incoterm: FOB,CFR,CIF
    Delivery Time: 30 Days

Basic Info

Model No.: YZPST-2SDW100

Certification: RoHS, CE

Encapsulation Structure: Plastic Sealed Transistor

Additional Info

Productivity: 1000

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description

Complementary power Darlington transistors

YZPST-2SDW100

Features


■ Complementary NPN - PNP transistors

■ Monolithic Darlington configuration



Applications


■ Audio power amplifier

■ DC-AC converter

■ Low voltage DC motor drive

■ General purpose switching applications


Description


The devices are manufactured in planar technology with [base island" layout and monolithic Darlington configuration.





Table 1. Device summary

Order code

Marking

Package

Packaging

2SDW100

2SDW100

TO-247

Tube

2SDW200

2SDW200


1 Absolute maximun ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

NPN

2SDW100

PNP

2SDW200

VCBO

Collector-emitter voltage (IE = 0)

80

V

VCEO

Collector-emitter voltage (IB = 0)

80

V

IC

Collector current

25

A

ICM

Collector peak current (tP < 5 ms)

40

A

IB

Base current

6

A

IBM

Base peak current (tP < 5 ms)

10

A

PTOT

Total dissipation at Tc 25 °C

130

W

TSTG

Storage temperature

-65 to 150

°C

TJ

Max. operating junction temperature

150

°C


Note: For PNP type voltage and current values are negative


Table 3. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case max

0.96

°C/W


2 Electrical characteristics

Tcase = 25 °C; unless otherwise specified.

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCE = 80 V

0.5

mA

ICEV

Collector cut-off current

(VBE = - 0.3 V)

VCE = 80 V

0.1

mA

ICEO

Collector cut-off current

(IB = 0)

VCE = 60 V

0.5

mA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

2

mA

VCEO(sus) (1)

Collector-emitter sustaining voltage (IB = 0)

IC = 50 mA

80

V

VCE(sat)(1)

Collector-emitter saturation voltage

IC = 5 A IB = 20 mA IC = 10 A IB = 40 mA IC = 20 A IB = 80 mA

1.2

1.75

3.5

V V V

VBE(sat)(1)

Base-emitter saturation voltage

C B

3.3

V

(1)

Base-emitter voltage

I = 10 A V = 3 V

1

3

V

hFE(1)

DC current gain

IC = 5 A VCE = 3 V IC = 10 A VCE = 3 V IC = 20 A VCE = 3 V

600

500

300

15000

12000

6000

VF(1)

Diode forward voltage

IF = 10 A

TBD

V

Is/b

Second breakdown current

VCE = 25 V t = 500 ms

TBD

A



Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCE = 80 V

0.5

mA

ICEV

Collector cut-off current

(VBE = - 0.3 V)

VCE = 80 V

0.1

mA

ICEO

Collector cut-off current

(IB = 0)

VCE = 60 V

0.5

mA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

2

mA

VCEO(sus) (1)

Collector-emitter sustaining voltage (IB = 0)

IC = 50 mA

80

V

VCE(sat)(1)

Collector-emitter saturation voltage

IC = 5 A IB = 20 mA IC = 10 A IB = 40 mA IC = 20 A IB = 80 mA

1.2

1.75

3.5

V V V

VBE(sat)(1)

Base-emitter saturation voltage

C B

3.3

V

(1)

Base-emitter voltage

I = 10 A V = 3 V

1

3

V

hFE(1)

DC current gain

IC = 5 A VCE = 3 V IC = 10 A VCE = 3 V IC = 20 A VCE = 3 V

600

500

300

15000

12000

6000

VF(1)

Diode forward voltage

IF = 10 A

TBD

V

Is/b

Second breakdown current

VCE = 25 V t = 500 ms

TBD

A

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.

For PNP type voltage and current values are negative.



TO-247 Mechanical data

Dim.

mm.

Min.

Typ

Max.

A

4.85

5.15

A1

2.20

2.60

b

1.0

1.40

b1

2.0

2.40

b2

3.0

3.40

c

0.40

0.80

D

19.85

20.15

E

15.45

15.75

e

5.45

L

14.20

14.80

L1

3.70

4.30

L2

18.50

øP

3.55

3.65

øR

4.50

5.50

S

5.50

transistors 2SDW100 1transistors 2SDW100



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  • TO-247 DC-AC converter Complementary NPN transistors
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