Home > Products > Semiconductor Stud Devices > Standard Recovery Stud Diode > 1200V High surge current capabilities Stud recovery diode

1200V High surge current capabilities Stud recovery diode

    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Delivery Time: 30 Days

Basic Info

Model No.: YZPST-SM40HF120

Additional Info

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 1000

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Product Description


STANDARD RECOVERY DIODES Stud Version

YZPST-SM40HF120

STANDARD RECOVERY DIODES

Features: High current carrying capability High voltage ratings up to 2000V

High surge current capabilities Stud cathode and stud anode version

Typical Applications Converters High power drives Power supplies Machine tool controls

Medium traction applications Power supplies

Parameters

SM40HF..

Units

40

A

@ TC

90

°C

IF(RMS)

62

A

@ 50Hz

570

A

@ 60Hz

590

A

@ 50Hz

1600

A2S

@ 60Hz

1450

A2S

VRRM range

400 to 2000

V

TJ

-40 to 160

°C


ELECTRICAL SPECIFICATIONS

Voltage Ratings

Type number

Voltage

Code

V RRM, maximum repetitive peakreverse voltage

V

V RSM , maximumnon- repetitive peakrev. voltage

V

I RRM max.

@ T J = T Jmax. mA

SM40HF..

40

400

500

30

80

800

900

120

1200

1300

140

1400

1500

160

1600

1700

200

2000

2100

Forward Conduction

Parameter

SM40HF..

Units

Conditions

I F(AV) Max. average forwardcurrent

@ Case temperature

40

A

180° conduction, half sine wave

90

°C

IF(RMS) Max. RMS forwardcurrent

62

A

DC @ TC = 75°C (04 to 20), TC = 36°C(25 to 32)

I FSM, Maximum peak, one-cycleforward, non-repetitive surgecurrent

570

A

t = 10ms

No voltage reapplied

Sinusoidal half wave,

Initial T = Tmax.

590

t = 8.3ms

480

t = 10ms

100% VRRM

reapplied

500

t = 8.3ms

I 2 t Maximum I 2 t for fusing

1600

A 2 s

t = 10ms

No voltage reapplied

1450

t = 8.3ms

1150

t = 10ms

100% VRRM

reapplied

1050

t = 8.3ms

I2t Maximum I2t for fusing

16000

A2s

t = 0.1 to 10ms, no voltage reapplied

VF(TO) Low level value of thresholdvoltage

0.65

V

TJ = 200°C

rf Max. value of forward sloperesistance

4.30

mΩ

VFM Max. forward voltagedrop

1.30

V

(IFM x π x IF(AV) (125A peak), TJ = 25°C

hermal and Mechanical Specifications

Parameter

SM40HF..

Units

Conditions

T J

- 40 to 150

°C

Tstg

- 40 to 150

R thJC Thermal Impedance, max.

0.95

K/W

DC operation

RthCS Max. thermal resistance, caseto

heatsink

0.25

Mounting surface, smooth, flat andgreased

T Max. allowed mounting torque+0 -20%

3.5

Nm

Not lubricated threads

2.3

Lubricated threads

wt Approximate weight

17

g

Case style

DO-203AB (DO-5)

See Outline Table


Ordering Information Table

Device Code

SM

40

HF

R

100

M

1

2

3

4 5 6

1 - Corporation code

2 - Average Forward Current: IFAV

3 - Diode

4 - None = Stud Normal Polarity (Cathode to Stud)

- R = Stud Reverse Polarity (Anode to Stud)

5 Voltage code: Code x 100 = VRRM

6 None = Stud base DO-203AB (DO-5) 1/4" 28UNF-2A M = Stud base DO-203AB (DO-5) M6X1

Looking for ideal 1200V Stud Recovery Diode Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the High Surge Current Capabilities Diode are quality guaranteed. We are China Origin Factory of Used for Diode Power Supply. If you have any question, please feel free to contact us.

Product Categories : Semiconductor Stud Devices > Standard Recovery Stud Diode

Product Images

  • 1200V High surge current capabilities Stud recovery diode
  • 1200V High surge current capabilities Stud recovery diode
Email to this supplier
  • *Subject:
  • *Messages:
    Your message must be between 20-8000 characters
Communicate with Supplier?Supplier
John chang Mr. John chang
What can I do for you?
Chat Now Contact Supplier