YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Silicon Controlled Rectifier (SCR)> TO220 NPN Type Transistor 2SC2073
TO220 NPN Type Transistor 2SC2073
TO220 NPN Type Transistor 2SC2073
TO220 NPN Type Transistor 2SC2073
TO220 NPN Type Transistor 2SC2073
TO220 NPN Type Transistor 2SC2073

TO220 NPN Type Transistor 2SC2073

$0.122000-9999 Piece/Pieces

$0.08≥10000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-2SC2073

BrandYZPST

VCBO150V

VCEO150V

VEBO5V

IC1.5A

PTOT75W

Tj150℃

Tstg-55-+150℃

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Download :
YZPST-2SC2073 TO220 NPN Type Transistor 2SC2073
Product Description

NPN Type Transistor 2SC2073

DESRCRIPTION:
The 2SC2073 is a NPN type transistor, used as a power switch tube for electronic ballasts and electronic energy-saving lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, low reverse leakage, etc.
NPN Type Transistor

ABSOLUTE MAX I MUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

5

V

IC

Continuous Collector Current

1.5

A

PTOT

Total dissipation at Tcase=25 ℃

75

W

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55-150

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

V(BR)CBO

Collector-Base Breakdown Voltage

IC=1mA

150

 

 

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC=0.1mA

150

 

 

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=1mA

-5

 

 

V

ICBO

Collector Cutoff Current

VCB=150V, IE=0

 

 

5

μA

ICEO

Collector Cutoff Current

VCE=150V, IC=0

 

 

5

μA

IEBO

Emitter Cutoff Current

VEB=5V, IC=0

 

 

5

μA

hFE

DC Current Gain

VCE=10V, IC=0.5A

40

 

140

 

VCE(sat)

Collector-Base Breakdown Voltage

IC=0.5A, IB=50mA

 

 

0.85

V

VBE(sat)

Base-Emitter Saturation Voltage

IC=0.5A, IB=50mA

 

 

1.5

V

a: tp300μs,δ≤2%

PACKAGE MECHANICAL DATA

NPN Type Transistor


苏ICP备05018286号-1
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