YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Silicon Controlled Rectifier (SCR)> NPN silicon power transistors MJE2955T complementary to MJE3055T
NPN silicon power transistors MJE2955T complementary to MJE3055T
NPN silicon power transistors MJE2955T complementary to MJE3055T
NPN silicon power transistors MJE2955T complementary to MJE3055T
NPN silicon power transistors MJE2955T complementary to MJE3055T
NPN silicon power transistors MJE2955T complementary to MJE3055T

NPN silicon power transistors MJE2955T complementary to MJE3055T

$0.122000-9999 Piece/Pieces

$0.08≥10000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-MJE2955T

BrandYZPST

VCBO-70V

VCEO-60V

VEBO-5V

IC-10A

PTOT75W

Tj150℃

Tstg-55-150℃

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Download :
YZPST-MJE2955T NPN silicon power transistors MJE29
Product Description


PNP SILICON POWER TRANSISTORS MJE2955T

DESRCRIPTION:
The MJE2955T is an PNP Transistor, which is complementary to MJE3055T and is used in audio power amplification and power conversion circuits.

Package form: TO-220

TO220 Silicon Power Transistors MJE2955T

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Continuous Collector Current

-10

A

PTOT

Total dissipation at Tcase=25 ℃

75

W

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55-150




● ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

VCBO

Collector-Base Breakdown Voltage

IC= -10mA

-70

 

 

V

VCEO

Collector-Emitter Breakdown Voltage

IC= -200mA

-60

 

 

V

VEBO

Emitter-Base Breakdown Voltage

IE= -10mA

- 5

 

 

V

ICBO

Collector Cutoff Current

VCB= -70V

 

 

1

mA

IEBO

Emitter Cutoff Current

VEB= -5V

 

 

5

mA

hFE

DC Current Gain

IC= -4A,VCE= -4V

20

 

100

 

VCE(sat)

Collector-Base Breakdown Voltage

IC= -4A,IB= -0.4A

 

 

-1.1

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -4A,IB= -4A

 

 

-1.8

V

fT

Transition Frequency

VCE=10V, IC=0.5A f=1MHZ

2

 

 

MHZ

aPulse Testtp ≤300usδ≤2%

 PACKAGE MECHANICAL DATA

MJE2955T Complementary to MJE3055T TO220


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