NPN silicon power transistors MJE2955T complementary to MJE3055T
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Transportation: | Ocean,Air |
Port: | SHANGHAI |
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Payment Type: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Transportation: | Ocean,Air |
Port: | SHANGHAI |
Model No.: YZPST-MJE2955T
Brand: YZPST
VCBO: -70V
VCEO: -60V
VEBO: -5V
IC: -10A
PTOT: 75W
Tj: 150℃
Tstg: -55-150℃
Selling Units | : | Piece/Pieces |
Package Type | : | 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging |
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PNP SILICON POWER TRANSISTORS MJE2955T
DESRCRIPTION:
The MJE2955T is an PNP Transistor, which is complementary to MJE3055T and is used in audio power amplification and power conversion circuits.
Package form: TO-220
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | -70 | V |
VCEO | Collector-Emitter Voltage | -60 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Continuous Collector Current | -10 | A |
PTOT | Total dissipation at Tcase=25 ℃ | 75 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature Range | -55-150 | ℃ |
● ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Symbol | Parameter | Test Condition | Value | Unit | ||
Min | Type | Max | ||||
VCBO | Collector-Base Breakdown Voltage | IC= -10mA | -70 |
|
| V |
VCEO | Collector-Emitter Breakdown Voltage | IC= -200mA | -60 |
|
| V |
VEBO | Emitter-Base Breakdown Voltage | IE= -10mA | - 5 |
|
| V |
ICBO | Collector Cutoff Current | VCB= -70V |
|
| 1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V |
|
| 5 | mA |
hFE | DC Current Gain | IC= -4A,VCE= -4V | 20 |
| 100 |
|
VCE(sat) | Collector-Base Breakdown Voltage | IC= -4A,IB= -0.4A |
|
| -1.1 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -4A,IB= -4A |
|
| -1.8 | V |
fT | Transition Frequency | VCE=10V, IC=0.5A, f=1MHZ | 2 |
|
| MHZ |
a:Pulse Test,tp ≤300us,δ≤2% |
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