YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Module Devices> Diode Module> 2000V Thyristor Diode Module Thyristor chip with center gate
2000V Thyristor Diode Module Thyristor chip with center gate
2000V Thyristor Diode Module Thyristor chip with center gate
2000V Thyristor Diode Module Thyristor chip with center gate
2000V Thyristor Diode Module Thyristor chip with center gate
2000V Thyristor Diode Module Thyristor chip with center gate
2000V Thyristor Diode Module Thyristor chip with center gate

2000V Thyristor Diode Module Thyristor chip with center gate

$3110-99 Piece/Pieces

$22.5≥100Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Land
Port:SHANGHAI
Product Attributes

Model No.YZPST-MCD215-20I01

BrandYZPST

Place Of OriginChina

VDRM/VRRM2000V

VRSM2100V

IT(AV)215A

ITRMS340A

(di/dt)cr100A/us

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example :
Download :
Thyristor Diode Module YZPST-MCD215-20I01
Product Description

Thyristor/Diode Modules YZPST-MCD215-20I01

Features
· Industrial standard package
· Electrically insulated base plate
· Heat transfer through aluminium oxide ceramic 
insulated metal base plate
· Chip soldered on direct copper bonded AL2O3
ceramic
· Thyristor chip with center gate

Typical Applications
· DC motor control
· AC motor soft starters
· Temperature control
· Professional light dimming

VDRM/VRRM

Tj=25°C

2000

V

VRSM

Tj=25°C

2100

V

Maximum Ratings

Symbol Condition Ratings Unit
IT(AV) sin. 180; Tc  =85°C, 215 A
ITRMS sin. 180; Tc  =125°C, 340 A
ITSM Tvj =45°C; 10 ms 8000 A
Tvj =125°C; 10 ms 6800 A
I2t Tvj =45°C;   8,3…10 ms 320 kA2S
(di/dt)cr non-repetitive 100 A/us
Viso A.C. 1s / 1min. 3600/3000 V
Tj -40 ~ + 125 °C
Tstg -40 ~ + 125 °C
W About 150 g

Electrical Characteristics

Symbol

Condition

Ratings

Unit

IDRM /IRRM

AtVDRM, Tj=125°C

15

mA

VT

On-State Current 200A, Tj=25°C

1.20

V

VT(TO)

Tj=125°C

0.80

V

tgd

Tj=25°C

2

us

tq

Tj=100°C

200

us

IGT/VGT

Tj=25°C

150 / 2.0

mA/V

VGD

Tj=125°C

0.25

V

(dv/dt)cr

Tj=125°C

1000

V/us

IH

Tj=25°C, max.

150

mA

IL

Tj=25°C,   max.

200

mA

Rth(j-c)

Per Module

0.13

K/W

YZPST-MCD215-20I01 Outline Drawing



Home> Products> Semiconductor Module Devices> Diode Module> 2000V Thyristor Diode Module Thyristor chip with center gate
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