YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Module Devices> Diode Module> High surge capability 150A silicon super fast recovery diode module
High surge capability 150A silicon super fast recovery diode module
High surge capability 150A silicon super fast recovery diode module
High surge capability 150A silicon super fast recovery diode module
High surge capability 150A silicon super fast recovery diode module
High surge capability 150A silicon super fast recovery diode module
High surge capability 150A silicon super fast recovery diode module
High surge capability 150A silicon super fast recovery diode module

High surge capability 150A silicon super fast recovery diode module

$8.2100-999 Piece/Pieces

$6.2≥1000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Land,Others
Port:SHANGHAI
Product Attributes

Model No.YZPST-ESB150NH40SN

BrandYZPST

Place Of OriginChina

IF(AV)M150A

IFSM2100A

I2t1830kA2S

Tj-40 ~ + 175℃

Tstg-40 ~ + 150℃

IRRM1mA

VFM1.4V

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example :
Download :
Diode Module ESB150NH40SN
Product Description

Silicon Super Fast Recovery Diode Module 

TYPE:YZPST-ESB150NH40SN

Features

· High Surge Capability

· Types from 50 V to 600 V  VRRM 

· Not ESD Sensitive

YZPST-ESB150NH40SN

Symbol

Condition

Ratings

Unit

IF(AV)M

TC=100°C; 180° sine

150

A

IFRMS

maximum value for continuous operation

 

A

IFSM

Tj=25°C; t = 8.3 ms (50 Hz); sine

2100

A

I2t

Tj=25°C; t = 8.3 ms (50 Hz); sine

1830

kA2S

Viso

A.C.1minute/1second

-

V

Tj

 

-40  ~  + 175

°C

Tstg

 

-40  ~  + 150

°C

M

mounting torque; ±15%

4

Nm

terminal torque; ±15%

3

Nm

W

approx.

95

g

IRRM

AtVRRMSingle phasehalf waveTj=100°C

1

mA

VFM

On-State Current 150ATj=25°C

1.40

V

VF0

Tj=150°C

-

V

rF

Tj=150°C

-

trr

Tj=25°C; IF = 150A; -diF/dt =300A/μs; VR = 200V;

120

ns

Qrr

Tj=150°C; IF = 50A; -diF/dt = 100A/μs; VR = 100V

-

us

IRM

-

A

Rth(j-c)

Per Module

0.12

°C/W

Rth(c-h)

Per Module

-

°C/W

Outline Drawing

Outline Jpg

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