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Home > Products > Semiconductor Stud Devices > Fast Recovery Stud Diode > Fast Recovery Stud Diode 1800V

Fast Recovery Stud Diode 1800V

Fast Recovery Stud Diode 1800V

Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Delivery Time: 30 Days
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Basic Info

    Model No.: YZPST-Z20A-ZK20A18

Additional Info

    Productivity: 1000

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 10000

    Certificate: ISO9001-2008,ROHS

    HS Code: 85411000

    Port: Shanghai

Product Description

Good Performance Fast Diode

YZPST-Z20A-ZK20A18

Quick recovery diodes are also commonly represented by graphics symbols of ordinary diodes, either in text or in type.Fast recovery diodes are similar to ordinary diodes, but the manufacturing process is different from that of ordinary single-pole tubes.The doping concentration near the PN junction is very low to obtain higher switching speed and lower forward pressure drop.Its reverse recovery time is 200 ~ 750 ns, high speed up to 10 ns.Compared with schottky diode, its voltage resistance is much higher.It is mainly used as a high speed rectifier element, and as a Rectifier Diode in switching power supply and inverter power supply, so as to reduce off loss, improve efficiency and reduce noise

Forward Conduction

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse voltage

VRRM

1800

V

Non repetitive peak reverse voltage

VRSM

1900

V

Max. average forward current

IF(AV)

20

A

Sinewave,180o conduction,Tc=100oC

Max. RMS forward current

IF(RMS)

33

A

Nominal value; Tc=100oC

Max. peak, one-cycle forward,

non-repetitive surge current

IFSM

0.3

kA

10.0 msec (50Hz), half sinewave,

Tvj = Tvj max, VRM = 0.6VRRM

Maximum I2t for fusing

I2t

4.9

kA2s

Max. forward voltage drop

VF

2.15

V

IF = 650A; Tvj = Tvj max

Threshold voltage

VTO

1.1

V

IF < 500A

Slope resistance

rT

1.5

Thermal and Mechanical Specifications

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse leakage and off state

IRRM

70

mA

Tvj = Tvj max

Operating temperature

Tj

-40

+140

oC

Storage temperature

Tstg

-40

+150

oC

Maximum Reverse Recovery Time

Trr

2.2

μS

Reverse recovery charge

Qrr

870

μAc

Thermal resistance - junction to case

RQ (j-c)

-

-

0.26

oC/W

Thermal resistamce - case to heatsink

RQ (c-s)

-

-

0.04

oC/W

Mounting force

P

20

Nm

± 20%

Weight

W

-

-

-

g

About

Case style

-

See Outline Table



Fast Recovery Diode Stud YZPST-Z20A-ZK20A18



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Product Categories : Semiconductor Stud Devices > Fast Recovery Stud Diode

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Mr. John chang

Email:

info@yzpst.com

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