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Home > Products > Semiconductor Stud Devices > Phase Control Stud Thyristor > High Frequency DC Power Encapsulation Thyristors

High Frequency DC Power Encapsulation Thyristors

High Frequency DC Power Encapsulation Thyristors

Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Delivery Time: 30 Days
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Basic Info

    Model No.: YZPST-T700123503BY

Additional Info

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 1000

    Certificate: ISO9001-2008,ROHS

    HS Code: 85413000

    Port: Shanghai

Product Description



Phase Control Thyristors

YZPST-T700123503BY

Features of the Phase Control Thyristors: center amplifying gate configuration, compression bonded encapsulation, high DV/DT capability and stud type, thread inch or metric. The typical applications of the High Frequency Thyristors are medium power switching and DC power supplies.


Maximum Ratings And Characteristics

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

ITAV

Mean on-state current

350

A

Sinewave,180° conduction,Tc=85

ITRMS

RMS value of on-state current

550

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

9.1

KA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I2t

I square t

416

KA2s

8.3 msec and 10.0 msec

IL

Latching current

-

mA

VD = 24 V; RL= 12 ohms

IH

Holding current

-

mA

VD = 24 V; I = 2.5 A

VTM

Peak on-state voltage

1.4

V

ITM = 625 A; Duty cycle £ 0.01%

di/dt

Critical rate of rise

of on-state current

non-repetitive

800

A/ms

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM

repetitive

150

BLOCKING

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1200

V

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1300

V

IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse current

30

mA

Tj = 125 oC ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

1000

V/ms

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

PG(AV)

Average gate power dissipation

3

W

PGM

Peak gate power dissipation

16

W

IGM

Peak gate current

-

A

IGT

Gate trigger current

150

mA

TC = 25 oC

VGT

Gate trigger voltage

3.0

V

TC = 25 oC

VGD

Gate non-trigger voltage

0.15

V

Tj = 125 oC

SWITCHING

tq

Turn-off time

150

ms

ITM=550A, TJ=TJmax, di/dt=40A/μs,

VR=50V, dv/dt=20V/μs, Gate 0V 100Ω, tp=500μs

td

Delay time

-

Gate current A, di/dt=40A/μs,

Vd=0.67%VDRM, TJ=25 oC

Qrr

Reverse recovery charge

-

Thermal And Mechanical

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

oC

Tstg

Storage temperature

-40~150

oC

R th (j-c)

Thermal resistance - junction to case

0.1

oC/W

DC operation ,Single sided cooled

R th (c-s)

Thermal resistance - case to sink

0.05

oC/W

Single sided cooled

P

Mounting force

3.5

Nm

W

Weight

-

g

about

Detailed Images
Phase Control Thyristors YZPST-T700123503BY

Looking for ideal High Frequency Thyristors Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the DC Power Thyristors are quality guaranteed. We are China Origin Factory of Encapsulation Thyristors Phase Control. If you have any question, please feel free to contact us.

Product Categories : Semiconductor Stud Devices > Phase Control Stud Thyristor

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Mr. John chang

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info@yzpst.com

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