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Home > Products > Semiconductor Disc Devices(Capsule Type) > Reverse Conducting Thyristor(RCT) > Optimized for low dynamic losses thyristor RCT 2000V

Optimized for low dynamic losses thyristor RCT 2000V
Optimized for low dynamic losses thyristor RCT 2000V

Optimized for low dynamic losses thyristor RCT 2000V

Unit Price: USD 360 / Piece/Pieces
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Min. Order: 20 Piece/Pieces
Delivery Time: 30 Days

Basic Info

    Model No.: YZPST-KT50BT-5STR03T2040

    Type: Intrinsic Semiconductor

Additional Info

    Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 500

    Certificate: ISO9001-2008,ROHS

    HS Code: 85413000

    Port: Shanghai

Product Description

REVERSE CONDUCTING THYRISTORS

YZPST-KT50BT-5STR03T2040

Features:
. Integrated freewheeling diode
. Optimized for low dynamic losses

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

2000

2000

2100


VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

10 mA

70 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.

onducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M

IF(AV)M

360

223

A

Sinewave,180o conduction,Tc=70oC

RMS value of on-state current

ITRMS

566

351

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

IFSM

5000

3500

A

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

125x103

61x103

A2s

8.3 msec

Latching current

IL

500

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

100

mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM

VFM

2.61

3.42

V

ITM = 1000 A

Critical rate of rise of on-state

current (5, 6)

di/dt

-

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

400

A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

-

W

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

25

A

Gate current required to trigger all units

IGT

400

mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units

VGT

2.5

V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM

2

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

1.0

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

-

Turn-off time (with VR = -5 V)

tq

40

-

ms

ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us

Reverse recovery current

Irm

-

A

ITM=4000A, tp=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+120

oC

Thermal resistance - junction to case

RQ (j-c)

RQ (j-c)D

55

140

88

165

K/kW

Double sided cooled

Single sided cooled

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

10

20

K/kW

Double sided cooled *

Single sided cooled *

Mounting force

F

8

12

-

kN

Weight

W

-

Kg

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data


REVERSE CONDUCTING THYRISTORS


Sym

A

B

C

D

H

mm

68

45

62

3.5×3

20±1

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Reverse Conducting Thyristor(RCT)

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