YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Bi Directions Thyristor (Triac)> N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET
N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET
N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET
N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET
N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET
N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET

N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET

$4.15200-999 Piece/Pieces

$3.98≥1000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-1A01K170K

BrandYZPST

Place Of OriginChina

VDSmax1700V

VGSmax-10/+25V

VGSop-5/+20V

ID5.0A 3/5A

LD(pulse)6.0A

PD69W

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Download :
SCR S3530 TO-220F
Product Description

YZPST-1A01K170K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode


VDS = 1700 V

RDs(on) = 1.0Q 

lDS@25°C = 5.0 A


Features

High-voltage Capacitive
High Blocking Voltage with low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Ultra-low Drain-gate capacitance
Avalance Ruggedness
Silicon Carbide Power MOSFET


Benefits

Higher System Efficiency
Reduced Cooling Requirements
Increased System Reliability
Increased System Switching Frequency

Applications
Auxiliary Power Supplies
Switch Mode Power Supplies

Part Number Package
1A01K170K TO-247-3
Maximum Ratings (Tc=25°C unless otherwise specified)

YZPST-1A01K170K-2

Home> Products> Semiconductor Plastic Package> Bi Directions Thyristor (Triac)> N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET
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