$1952-99 Piece/Pieces
$135≥100Piece/Pieces
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| Incoterm: | FOB,CFR,CIF |
| Transportation: | Ocean,Air |
| Port: | Shanghai |
Model No.: YZPST-450B170E53
VCES: 1700V
IC: 450V
ICRM: 900A
VGES: ±20V
Ptot: 3260W
ICES: 1.0mA
| Selling Units | : | Piece/Pieces |
| Package Type | : | 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging |
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IGBT Power Module YZPST-450B170E53
Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Features
Low Vce(sat) with SPT+ IGBT technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Maximum junction temperature 175C
Absolute Maximum Ratings
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25C | 1700 | V |
| Continuous Collector Current | IC | Tc=100C | 450 | A |
| Peak Collector Current | ICRM | tp=1ms | 900 | A |
| Gate-Emitter Voltage | VGES | Tvj=25C | ±20 | V |
| Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25C Tvjmax=175C | 3260 | W |
IGBT Characteristics
Turn-on Delay Time td(on) IC =450 A VCE = 900 V VGE = ±15V RG = 3.3Ω Tvj=150C 515 ns Rise Time tr 200 ns Turn-off Delay Time td(off) 730 ns Fall Time tf 430 ns Energy Dissipation During Turn-on Time Eon 175 mJ Energy Dissipation During Turn-off Time Eoff 130 mJ SC Data Isc Tp≤10us,VGE=15V, Tvj=150C,Vcc=1000V, VCEM≤1700V 1450 A
Parameter Value Unit Symbol Conditions Min. Typ. Max. Gate-emitter Threshold Voltage VGE(th) VGE=VCE, IC =24mA,Tvj=25C 5.4 6.2 7.4 V Collector-Emitter Cut-off Current ICES VCE=1700V,VGE=0V, Tvj=25C 1 mA Ic=450A,VGE=15V, Tvj=25C 2.4 2.75 V Collector-Emitter VCE(sat) Ic=450A,VGE=15V, Tvj=125C 2.8 V Saturation Voltage Ic=450A,VGE=15V, Tvj=150C 2.9 V Gate Charge G 2.7 uC Input Capacitance Cies 30 nF Output Capacitance Coes VCE=25V,VGE =0V, 1.65 nF Reverse Transfer Capacitance Cres f=1MHz, Tvj=25C 1.08 nF Gate-Emitter leakage current IGES VCE=0 V, VGE=20 V, Tvj = 25C 400 nA Turn-on Delay Time td(on) 510 ns Rise Time tr IC =450 A 180 ns Turn-off Delay Time td(off) VCE = 900 V 620 ns Fall Time tf VGE = ±15V 185 ns Energy Dissipation During Turn-on Time Eon RG = 3.3Ω 126 mJ Energy Dissipation During Turn-off Time Eoff Tvj=25C 89 mJ Turn-on Delay Time td(on) 512 ns Rise Time tr IC =450 A 190 ns Turn-off Delay Time td(off) VCE = 900 V 712 ns Fall Time tf VGE = ±15V 350 ns Energy Dissipation During Turn-on Time Eon RG = 3.3Ω 162 mJ Energy Dissipation During Turn-off Time Eoff Tvj=125C 125 mJ
Diode Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Diode DC Forward Current | IF | Tc=100C | 450 | A | ||
| Diode Peak Forward Current | IFRM | tp=1ms | 900 | A | ||
| IF=450A,Tvj=25C | 1.85 | V | ||||
| IF=450A,Tvj=125C | 1.92 | V | ||||
| Forward Voltage | VF | IF=450A,Tvj=150C | 1.9 | V | ||
| Recovered Charge | Qrr | IF =450 A | 110 | uC | ||
| VR=900V | ||||||
| Peak Reverse Recovery Current | Irr | -diF/dt =2500A/us | 348 | A | ||
| Reverse Recovery Energy | Erec | Tvj=25C | 64.2 | mJ | ||
| Recovered Charge | Qrr | IF =450 A | 160 | uC | ||
| VR=900V | ||||||
| Peak Reverse Recovery Current | Irr | -diF/dt =2500A/us | 394 | A | ||
| Reverse Recovery Energy | Erec | Tvj=125C | 94.4 | mJ | ||
| Recovered Charge | Qrr | IF =450 A | 176 | uC | ||
| VR=900V | ||||||
| Peak Reverse Recovery Current | Irr | -diF/dt =2500A/us | 410 | A | ||
| Reverse Recovery Energy | Erec | Tvj=150C | 103.2 | mJ | ||
Circuit Diagram
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