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Home> Products> Semiconductor Module Devices> IGBT Module> High short circuit capability 650V IGBT Power Module 200A
High short circuit capability 650V IGBT Power Module 200A
High short circuit capability 650V IGBT Power Module 200A
High short circuit capability 650V IGBT Power Module 200A
High short circuit capability 650V IGBT Power Module 200A
High short circuit capability 650V IGBT Power Module 200A
High short circuit capability 650V IGBT Power Module 200A

High short circuit capability 650V IGBT Power Module 200A

$3310-99 Piece/Pieces

$25≥100Piece/Pieces

Payment Type:L/C,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Land
Port:SHANGHAI
Product Attributes

Model No.YZPST-SKM195GB066D

BrandYZPST

Place Of OriginChina

VCES650V

IC200A

ICRM400A

VGES±20V

Ptot695W

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example :
Download :
IGBT Module SKM195GB066D
Product Description

IGBT Power Module  Type:YZPST-SKM195GB066D


Applications

 Inverter for motor drive

 AC and DC servo drive amplifier

 UPS (Uninterruptible Power Supplies)

 Soft switching welding machine

Features

 Low Vce(sat) with Trench Field-stop technology

 Vce(sat) with positive temperature coefficient

 Including fast & soft recovery anti-parallel FWD

 High short circuit capability(10us)

 Low inductance module structure

 Maximum junction temperature 175℃

650V IGBT Power Module 200A



Absolute Maximum Ratings

Parameter

Symbol

Conditions

Value

Unit

Collector-Emitter Voltage

VCES

VGE=0V, IC =1mA, Tvj=25

650

V

Continuous Collector Current

IC

Tc=100

200

A

Peak Collector Current

ICRM

tp=1ms

400

A

Gate-Emitter Voltage

VGES

Tvj=25

±20

V

Total Power Dissipation

(IGBT-inverter)

Ptot

Tc=25

Tvjmax=175

695

W

IGBT Characteristics

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Gate-Emitter Threshold Voltage VGE(th) VGE=VCE,  IC =3.2mA,Tvj=25 5.1 5.8 6.3 V
VCE=650V,VGE=0V, Tvj=25 1 mA
Collector-Emitter Cut-off Current ICES VCE=650V,VGE=0V, Tvj=125 5 mA
Collector-Emitter Ic=200A,VGE=15V, Tvj=25 1.45 1.95 V
Saturation Voltage VCE(sat) Ic=200A,VGE=15V, Tvj=125 1.65 V
Input Capacitance Cies VCE=25V,VGE =0V, 12.3 nF
Reverse Transfer Capacitance Cres f=1MHz, Tvj=25 0.37 nF
Internal Gate Resistance Rgint 1 Ω
Turn-on Delay Time td(on) 48 Ns
Rise Time tr IC =200 A 48 Ns
Turn-off Delay Ttime td(off) VCE =300 V 348 Ns
Fall Time tf VGE = ±15V 58 Ns
Energy Dissipation During Turn-on Time Eon RG = 3.6Ω 2.32 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=25 5.85 mJ
Turn-on Delay Time td(on) 48 Ns
Rise Time tr IC =200 A 48 Ns
Turn-off Delay Time td(off) VCE = 300V 364 Ns
Fall Time tf VGE = ±15V 102 Ns
Energy Dissipation During Turn-on Time Eon RG =3.6Ω 3.08 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=125 7.92 mJ
SC Data Isc Tp≤10us,VGE=15V,Tvj=150 , Vcc=300V,VCEM≤650V 1000 A

Diode Characteristics

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Diode DC Forward Current IF Tc=100 200 A
Diode Peak Forward Current IFRM 400 A
IF=200A,Tvj=25 1.55 1.95 V
Forward Voltage VF IF=200A,Tvj=125 1.5 V
Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Recovered Charge Qrr 8.05 uC
IF =200 A
VR=300V
Peak Reverse Recovery Current Irr -diF/dt =4200A/us 148 A
Reverse Recovery Energy Erec Tvj=25 1.94 mJ
Recovered Charge Qrr 16.9 uC
IF =200 A
VR=300V
Peak Reverse Recovery Current Irr -diF/dt =4200A/us 186 A
Reverse Recovery Energy Erec Tvj=125 3.75 mJ

Module CharacteristicsTC=25°C unless otherwise specified

Parameter Symbol Conditions Value Unit
Min. Typ. Max.
Isolation voltage Visol t=1min,f=50Hz 2500 V
Maximum Junction Temperature Tjmax 150
Operating Junction Temperature Tvj op -40 125
Storage Temperature Tstg -40 125
per IGBT-inverter 0.19 K/W
Junction-to Case R θjc per Diode-inverter 0.31 K/W
Case to Sink R θcs Conductive grease applied 0.085 K/W
Module ElectrodesTorque Mt Recommended(M5) 2.5 5 N · m
Module-to-SinkTorque Ms Recommended(M6) 3 5 N · m
Weight of Module G 150 g

Package Dimensions

YZPST-SKM195GB066D Package Dimensions



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