High short circuit capability 650V IGBT Power Module 200A
$3310-99 Piece/Pieces
$25≥100Piece/Pieces
Payment Type: | L/C,Paypal |
Incoterm: | FOB,CFR,CIF |
Transportation: | Ocean,Land |
Port: | SHANGHAI |
Model No.: YZPST-SKM195GB066D
Brand: YZPST
Place Of Origin: China
VCES: 650V
IC: 200A
ICRM: 400A
VGES: ±20V
Ptot: 695W
Selling Units | : | Piece/Pieces |
Package Type | : | 1. Anti-electrostatic packaging 2. Carton box 3. braid |
Picture Example | : | |
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IGBT Power Module Type:YZPST-SKM195GB066D
Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Soft switching welding machine
Features
Low Vce(sat) with Trench Field-stop technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Maximum junction temperature 175℃
Absolute Maximum Ratings
Parameter | Symbol | Conditions | Value | Unit |
Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25℃ | 650 | V |
Continuous Collector Current | IC | Tc=100℃ | 200 | A |
Peak Collector Current | ICRM | tp=1ms | 400 | A |
Gate-Emitter Voltage | VGES | Tvj=25℃ | ±20 | V |
Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25℃ Tvjmax=175℃ | 695 | W |
IGBT Characteristics
Parameter Value Unit Symbol Conditions Min. Typ. Max. Gate-Emitter Threshold Voltage VGE(th) VGE=VCE, IC =3.2mA,Tvj=25℃ 5.1 5.8 6.3 V VCE=650V,VGE=0V, Tvj=25℃ 1 mA Collector-Emitter Cut-off Current ICES VCE=650V,VGE=0V, Tvj=125℃ 5 mA Collector-Emitter Ic=200A,VGE=15V, Tvj=25℃ 1.45 1.95 V Saturation Voltage VCE(sat) Ic=200A,VGE=15V, Tvj=125℃ 1.65 V Input Capacitance Cies VCE=25V,VGE =0V, 12.3 nF Reverse Transfer Capacitance Cres f=1MHz, Tvj=25℃ 0.37 nF Internal Gate Resistance Rgint 1 Ω Turn-on Delay Time td(on) 48 Ns Rise Time tr IC =200 A 48 Ns Turn-off Delay Ttime td(off) VCE =300 V 348 Ns Fall Time tf VGE = ±15V 58 Ns Energy Dissipation During Turn-on Time Eon RG = 3.6Ω 2.32 mJ Energy Dissipation During Turn-off Time Eoff Tvj=25℃ 5.85 mJ Turn-on Delay Time td(on) 48 Ns Rise Time tr IC =200 A 48 Ns Turn-off Delay Time td(off) VCE = 300V 364 Ns Fall Time tf VGE = ±15V 102 Ns Energy Dissipation During Turn-on Time Eon RG =3.6Ω 3.08 mJ Energy Dissipation During Turn-off Time Eoff Tvj=125℃ 7.92 mJ SC Data Isc Tp≤10us,VGE=15V,Tvj=150℃ , Vcc=300V,VCEM≤650V 1000 A
Diode Characteristics
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Diode DC Forward Current | IF | Tc=100℃ | 200 | A | ||
Diode Peak Forward Current | IFRM | 400 | A | |||
IF=200A,Tvj=25℃ | 1.55 | 1.95 | V | |||
Forward Voltage | VF | IF=200A,Tvj=125℃ | 1.5 | V |
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Recovered Charge | Qrr | 8.05 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 148 | A | ||
Reverse Recovery Energy | Erec | Tvj=25℃ | 1.94 | mJ | ||
Recovered Charge | Qrr | 16.9 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 186 | A | ||
Reverse Recovery Energy | Erec | Tvj=125℃ | 3.75 | mJ |
Module CharacteristicsTC=25°C unless otherwise specified
Parameter | Symbol | Conditions | Value | Unit | ||
Min. | Typ. | Max. | ||||
Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
Operating Junction Temperature | Tvj op | -40 | 125 | ℃ | ||
Storage Temperature | Tstg | -40 | 125 | ℃ | ||
per IGBT-inverter | 0.19 | K/W | ||||
Junction-to Case | R θjc | per Diode-inverter | 0.31 | K/W | ||
Case to Sink | R θcs | Conductive grease applied | 0.085 | K/W | ||
Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N · m | |
Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N · m | |
Weight of Module | G | 150 | g |
Package Dimensions
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