YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> Promotion power Thyristor with best price 1200V
Promotion power Thyristor with best price 1200V
Promotion power Thyristor with best price 1200V
Promotion power Thyristor with best price 1200V

Promotion power Thyristor with best price 1200V

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Product Attributes

Model No.YZPST-R1271NS12C

BrandYZPST

Packaging & Delivery
Selling Units : Others
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Product Description


High Power Thyristors for Promotion 

YZPST-R1271NS12C

High Power Thyristor FOR PHASE CONTROL APPLICATIONS


Power Thyristors of Features:. All Diffused Structure   . Guaranteed Maximum Turn-Off Time   . Interdigitated Amplifying Gate Configuration

              . High dV/dt Capability    . Pressure Assembled Device


ELECTRICAL CHARACTERISTICS AND RATINGS


Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

1200

1200

1300

       VRRM = Repetitive peak reverse voltage

       VDRM = Repetitive peak off state voltage

       VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

20 mA

150mA (3)

Critical rate of voltage rise

dV/dt (4)

200 V/msec

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.


Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

1271

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)m

2599

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

  

18.0

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

1.62x106

A2s

8.3 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

1000

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

2.02

V

ITM = 2000 A

Critical rate of rise of on-state

current (5, 6)

di/dt

1500

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

Average gate power dissipation

PG(AV)

2

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

300

mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units

VGT

3.0

V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

1.0

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

2.0

-

Turn-off time (with VR = -5 V)

tq

-

15

-

ms

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us

Reverse recovery current

Irm

-

A

ITM=4000A, tp=2000us, di/dt=60A/us

                                                  

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

-

-

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

-

-

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to case

RQ (j-s)

24

48

K/kW

Double sided cooled

Single sided cooled

Mounting force

F

19

25

-

kN

Weight

W

-

Kg

about

* Mounting surfaces smooth, flat and greased

     Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data




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Promotion Power Thyristor

Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> Promotion power Thyristor with best price 1200V
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