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Home> Products> Semiconductor Disc Devices(Capsule Type)> Phase Control Thyristor> Promotional High Power Thyristor for Phase Control
Promotional High Power Thyristor for Phase Control
Promotional High Power Thyristor for Phase Control
Promotional High Power Thyristor for Phase Control
Promotional High Power Thyristor for Phase Control
Promotional High Power Thyristor for Phase Control

Promotional High Power Thyristor for Phase Control

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Incoterm:FOB,CFR,CIF
Transportation:Ocean,Air
Port:Shanghai
Product Attributes

Model No.YZPST-R219CH12FN0

BrandYZPST

Product Description


High Power Thyristor for Phase Control

YZPST-R219CH12FN0

Features: 

 .Guaranteed Maximum Turn-Off Time

 . All Diffused Structure

. Pressure Assembled Device

 .Interdigitated Amplifying Gate Configuration

 . High dV/dt Capability


ELECTRICAL CHARACTERISTICS AND RATINGS

                                                     Blocking - Off State              


VRRM (1)

VDRM (1)

VRSM (1)

1200

1200

1300

       VRRM = Repetitive peak reverse voltage

       VDRM = Repetitive peak off state voltage

       VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

15 mA

70 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 V/msec





Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

929

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)m

1893

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

  

9.0

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

405x103

A2s

8.3 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

1000

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

2.04

V

ITM = 1400 A

Critical rate of rise of on-state

current (5, 6)

di/dt

1500

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from VDRM £ 1000 V




Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

Average gate power dissipation

PG(AV)

2

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

300

mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units

VGT

3.0

V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

1.0

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

2.0

-

Turn-off time (with VR = -5 V)

tq

-

-

10

ms

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/us

Reverse recovery current

Irm

-

A

ITM=4000A, tp=2000us, di/dt=60A/us


Detailed images



Phase Control Thyristor YZPST-R219CH12FN0

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