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Fast Delivery Siemens All Diffused Thyristor High DV/DT

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    Incoterm: FOB,CFR,CIF
    Delivery Time: 30 Days

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Basic Info

Model No.: YZPST-N1042LS18

Additional Info

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description

Fast Delivery Siemens Thyristor
YZPST-N1042LS18


Features: Interdigitated Amplifying Gate Configuration. High dV/dt Capability. Pressure Assembled Device. All Diffused Structure. Guaranteed Maximum Turn-Off Time.



Fast Delivery Siemens Thyristor YZPST-N1042LS18



Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

1042

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)M

2072

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

11.52

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

661x103

A2s

8.3 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

-

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

1.75

V

ITM = 1700 A

Critical rate of rise of on-state

current (5, 6)

di/dt

1000

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

500

A/ms

Switching from VDRM £ 1000 V



Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

Average gate power dissipation

PG(AV)

4

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

300

mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units

VGT

3.0

V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

-

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

-

-

Turn-off time (with VR = -5 V)

tq

-

-

-

ms

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us

Reverse recovery current

Irm

-

-

-

A

ITM=4000A, tp=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

-

-

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

-

-

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to case

RQ (j-s)

32

64

K/kW

Double sided cooled

Single sided cooled

Mounting force

F

10

20

-

kN

Weight

W

-

Kg

about

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data



Detailed Images
Fast Delivery Siemens Thyristor YZPST-N1042LS18

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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  • Fast Delivery Siemens All Diffused Thyristor High DV/DT
  • Fast Delivery Siemens All Diffused Thyristor High DV/DT
  • Fast Delivery Siemens All Diffused Thyristor High DV/DT
  • Fast Delivery Siemens All Diffused Thyristor High DV/DT
  • Fast Delivery Siemens All Diffused Thyristor High DV/DT
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