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Power Thyristors DCR1004 Phase Control 2200V

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Basic Info

Model No.: YZPST-DCR1004

Additional Info

Brand: YZPST

Transportation: Ocean,Air

Certificate: ISO9000

Port: SHANGHAI

Product Description

High Power Thyristor Phase Control

YZPST-DCR1004

Features: Center Amplifying Gate Configuration. Blocking capability up to 2100 volts. Guaranteed Maximum Turn-Off Time. High dV/dt Capability . Pressure Assembled Device. All Diffused Structure.



Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

1300

A

Sinewave,180o conduction,Tc=65oC

RMS value of on-state current

ITRMS

2000

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

20000

18000

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

1.7x106

A2s

8.3 msec and 10.0 msec

Latching current

IL

800

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

400

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

1.75

V

ITM = 3000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

600

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

200

A/ms

Switching from VDRM£ 1000 V


ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

10

A

Gate current required to trigger all units

IGT

300

150

125

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

0.30

5

3

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

5

V




Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

1.5

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

250

150

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

*

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V

* For guaranteed max. value, contact factory.


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

0.025

0.050

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

0.010

0.020

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

24.5

26.7

kN

Weight

W

460

g



* Mounting surfaces smooth, flat and greased


CASE OUTLINE AND DIMENSIONS

High Power Thyristor Phase Control


poseico ir scr thyristors DCR1004

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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  • Power Thyristors DCR1004 Phase Control 2200V
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