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5200V bv certificated thyristor driver

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    Incoterm: FOB,CFR,CIF
    Delivery Time: 30 Days

Basic Info

Model No.: YZPST-5STP34N5200

Type: Intrinsic Semiconductor

Additional Info

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description

High Power Thyristor FOR PHASE CONTROL

YZPST-5STP34N5200



Features:

. All Diffused Structure

. Center Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

5200

5200

5300

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

30 mA

95mA (3)

Critical rate of voltage rise

dV/dt (4)

2000 V/msec

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. Average value of on-state current

IT(AV)M

3600

A

Sinewave,180o conduction TC = 70 oC

RMS value of on-state current

ITRMS

5850

A

Nominal value

Peak one cpstcle surge

(non repetitive) current

ITSM

63

kA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

19.8×103

kA2s

Latching current

IL

500

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

125

mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM

1.54

V

ITM =3000 A; Tvj=125

Threshold voltage

VTO

1.03

V

Tvj=125

Slope resistance

Rt

0.16

mΩ

Tvj=125

Critical rate of rise of on-state

current (5, 6)

di/dt

1000

A/ms

Switching from VDRM £ 1500 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

200

A/ms

Switching from VDRM £ 1500 V

ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

-

W

tp = 40 us

Average gate power dissipation

PG(AV)

7

W

Peak gate current

IGM

10

A

Gate current required to trigger all units

IGT

-

400

-

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

-

2.6

-

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

10

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

-

ms

ITM =50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

700

ms

ITM = 2000 A; di/dt = 1.5 A/ms;

VR ³200 V; Re-applied dV/dt = 20 V/ms linear to 67% VDRM; VG = 0;

Tj = 125 oC; Duty cpstcle ³ 0.01%

Reverse recovery charge

Qrr

5200

mAs

ITM = 2000 A; di/dt = 1.5 A/ms;

VR ³200 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+140

oC

Thermal resistance - junction to case

RQ (j-c)

5.7

11.4

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

1

2

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to heatsink

RQ (j-s)

-

-

K/kW

Double sided cooled *

Single sided cooled *

Mounting force

P

81

108

-

kN

Weight

W

-

-

2.9

Kg

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data

THYRISTOR 5STP34N52 (3)


Sym

A

B

C

D

H

mm

150

100

108

3.5×3

35±1




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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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