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YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Silicon Controlled Rectifier (SCR)> High Voltage 30TPS12 30A SCR TO-247
High Voltage 30TPS12 30A SCR TO-247
High Voltage 30TPS12 30A SCR TO-247
High Voltage 30TPS12 30A SCR TO-247
High Voltage 30TPS12 30A SCR TO-247
High Voltage 30TPS12 30A SCR TO-247
High Voltage 30TPS12 30A SCR TO-247

High Voltage 30TPS12 30A SCR TO-247

$0.861000-1999 Piece/Pieces

$0.7≥2000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Land
Port:SHANGHAI
Product Attributes

Model No.YZPST-30TPS12

BrandYZPST

Place Of OriginChina

IGT≤35 mA

IT(RMS)30 A, 30A

VRRM1200V

VDRM1200V

IT(AV)20A

ITSM300A

I2t450A2s

DI /dt50A/μs

PG(AV)1W

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example :
Download :
SCR 30TPS12 TO247
Product Description

30TPS12 Thyristors P/N:YZPST-30TPS12

High Voltage 30TPS12 30A SCR TO-247

DESRCRIPTION:

The 30TPS12 High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125  °C junction temperature.Typical applications are in input rectification (soft start) and these products are designed to be used with input diodes, switches and output rectifiers,which are available in identical package outlines.

YZPST-30TPS12 SCR


Symbol

Symbol

Value

IGT

35 mA

IT(RMS)

30 A

VRRM

1200 V

ABSOLUTE MAX I MUM RATINGS (TC = 25°C, unless otherwise specified)

 

Symbol

PARAMETER

Value

Unit

V DRM

Repetitive peak off-state voltage (Tj =25)

1200

V

VRRM

Repetitive peak reverse voltage (Tj=25℃)

1200

V

IT(AV)

Average on-state current (180° conduction angle)

20

A

IT(RMS)

RMS on-state current(full sine wave)

30

A

ITSM

Non repetitive surge peak on-state current

(180° conduction angle, F=50Hz TC=85℃)

300

A

I2t

I2t for Fusing (t = 10 ms)

450

A2s

dI /dt

Critical rate of rise of on-state current

(I =2 ×IGT, tr  ≤  100 ns)

50

A/μs

IGM

Peak Gate Current

4

A

PG(AV)

Average Gate Power dissipation

1

W

Tstg

Storage junction temperature range

-40 ~ 150

°C

TJ

Operating junction temperature range

-40 ~ 125

°C

ELECTRICAL CHARACTERISTICS (Tj = 25。C, unless otherwise specified)


Symbol Test Condition Value Unit
Min Max
IGT V = 12V R =33Ω 35 mA
VGT 1.3 V
VGD VD=VDRM Tj=125℃ 0.2 V
IL IG= 1.2IGT 180 mA
IH IT=500mA 120 mA
dV/dt VD=2/3VDRM Gate Open Tj=125℃ 500 V/μs
VTM ITM =45A tp=380μs 1.7 V
IDRM VD=VDRM VR=VRRM 20 μA
IRRM 4 mA

PACKAGE MECHANICAL DATA

PACKAGE MECHANICAL DATA

苏ICP备05018286号-1
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