YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Silicon Transistor> BD139-16 NPN silicon transistor complementary BD140-16
BD139-16 NPN silicon transistor complementary BD140-16
BD139-16 NPN silicon transistor complementary BD140-16
BD139-16 NPN silicon transistor complementary BD140-16
BD139-16 NPN silicon transistor complementary BD140-16
BD139-16 NPN silicon transistor complementary BD140-16
BD139-16 NPN silicon transistor complementary BD140-16
BD139-16 NPN silicon transistor complementary BD140-16

BD139-16 NPN silicon transistor complementary BD140-16

$0.0320000-59999 Piece/Pieces

$0.02≥60000Piece/Pieces

Payment Type:T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Land
Port:SHANGHAI
Product Attributes

Model No.YZPST-BD139-16

BrandYZPST

Place Of OriginChina

VCBO80V

VCEO80V

VEBO5.0V

IC1.5A

IB0.5A

Ptot12.5W

Tj150℃

Tstg-55~150℃

Packaging & Delivery
Selling Units : Piece/Pieces
Download :
Transistor BD139-16 TO-126FCU
Product Description

NPN Silicon Transistor P/N:YZPST-BD139-16

BD139-16 NPN silicon transistor complementary PNP types are the BD140-16

DESCRIPTION
The BD139-16 is silicon epitaxial planar NPN transistors
in Jedec TO-126 Plastic Package, designed for audio
amplifiers and drivers utilizing complementary or quasi
compementary circuits.

The complementary PNP types are the BD140-16

YZPST-BD139-16


ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

1.5

A

Base Current

IB

0.5

A

Total Dissipation at

Ptot

12.5

W

Max. Operating Junction Temperature

Tj

150

oC

Storage Temperature

Tstg

-55~150

oC

ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)

Parameter Symbol Test   Conditions Min. Typ. Max. Unit
Collector Cut-off Current ICBO VCB  = 80V, IE  = 0 10 μA
Emitter Cut-off Current IEBO
VEB  = 5.0V, IC  = 0 10 μA
VCEO
Collector-Emitter Sustaining Voltage IC  = 1.0mA, IB  = 0 80 V
VCE  = 2.0V, IC  = 0.15A 100 250
DC Current Gain hFE
VCE  = 2.0V, IC  = 0.5A 100
VCE(sat)
Collector-Emitter Saturation Voltage IC  = 0.5A, IB  = 0.05A 0.5 V
VBE
Base-Emitter Voltage IC  = 0.5A, VCE  = 2.0V 1 V
fT
Transition Frequency VCE  = 5V,IC  = 50mA 80 MHz


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