YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Plastic Package> Silicon Transistor> Fast switching 500V N-Channel Power MOSFET
Fast switching 500V N-Channel Power MOSFET
Fast switching 500V N-Channel Power MOSFET
Fast switching 500V N-Channel Power MOSFET
Fast switching 500V N-Channel Power MOSFET
Fast switching 500V N-Channel Power MOSFET
Fast switching 500V N-Channel Power MOSFET

Fast switching 500V N-Channel Power MOSFET

$0.255000-19999 Piece/Pieces

$0.19≥20000Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Transportation:Ocean,Land,Express,Others
Port:SHANGHAI
Product Attributes

Model No.YZPST-SP13N50K

BrandYZPST

Place Of OriginChina

PackageTO-220

VDSS500V

ID13A

IDM52A

VGSS±30V

EAS550mJ

EAR65mJ

PD60W

Packaging & Delivery
Selling Units : Piece/Pieces
Package Type : 1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example :
Download :
MOSFET N-CHANNEL SP13N50K TO220
Product Description
P/N: YZPST-SP13N50KF
500V N-Channel Power MOSFET
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)

Power Factor Correction (PFC)

Yzpst Sp13n50k To 220 Jpg

Device Ordering Marking Packing Information

 

Ordering Number

 

Package

 

Marking

 

Packing

 

SP13N50KF

 

TO-220

 

SP13N50KF

Tube


Absolute Maximum Ratings  TC  = 25ºC, unless otherwise noted
Value
Parameter Symbol TO-220 Unit
Drain-Source Voltage (VGS  = 0V) VDSS 500 V
Continuous Drain Current ID 13 A
Pulsed Drain Current                                           (note1) IDM 52 A
Gate-Source Voltage VGSS ±30 V
Single Pulse Avalanche Energy                         (note2) EAS 550 mJ
Repetitive Avalanche Energy                             (note1) EAR 65 mJ
Power Dissipation (TC  = 25ºC) PD 60 W
Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Resistance
Value
Parameter Symbol TO-220 Unit
Thermal Resistance, Junction-to-Case RthJC 2.1 ºC/W
Thermal Resistance, Junction-to-Ambient RthJA 100

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