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Home > Products > Semiconductor Disc Devices(Capsule Type) > Asymmetric Thyristor > Chinese Price Professional Asymmetric Thyristor 341A

Chinese Price Professional Asymmetric Thyristor 341A

Chinese Price Professional Asymmetric Thyristor 341A

Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Delivery Time: 30 Days
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Basic Info

    Model No.: YZPST-KN341A24

Additional Info

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 500

    Certificate: ISO9001-2008,ROHS

    HS Code: 85413000

    Port: Shanghai

Product Description


Asymmetric Thyristor

YZPST-KN341A24


Asymmetric thyristor Applications




Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2000 volts

. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device


ELECTRICAL CHARACTERISTICS AND RATINGS


Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

10

2400/2800

10

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

5 mA

40 mA (3)

Critical rate of voltage rise (4)

dV/dt

1000 V/msec

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in ccordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi- tion to that obtained from a snubber circuit,

comprising a 0.2 F capacitor and 20 ohms resistance in parallel with the thristor under test.


Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

341

A

Sinewave,180o conduction,Tc =85oC

RMS value of on-state current

ITRMS

1040

A

Nominal value

Peak one cycle surge

(non repetitive) current

ITSM

-

5700

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

1.5

KA2s

8.3 msec and 10.0 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

1000

mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM

2.45

V

ITM = 1000 A; Duty cycle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

2000

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from VDRM £ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

tp = 40 us

Average gate power dissipation

PG(AV)

10

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

400

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

-

3

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

-

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

1

ms

ITM =50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

-

-

55

ms

ITM =500 A; di/dt =25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

*

mC

ITM =500 A; di/dt =25 A/ms;

VR ³ -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

-

-

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistamce - case to

sink

RQ (c-s)

-

-

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to sink

RQ (j-s)

50

100

K/KW

Double sided cooled *

Single sided cooled *

Mounting force

P

5

9

-

kN

Weight

W

-

g




Asymmetric thyristor YZPST-KN341A24




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Mr. John chang

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