Selling YZPST thyristor jiangsu

    Payment Type: L/C,T/T,Paypal
    Incoterm: FOB,CFR,CIF
    Delivery Time: 30 Days

Basic Info

Model No.: YZPST-KN1000A16-BSTR60110

Type: Intrinsic Semiconductor

Additional Info

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Product Description

Asymmetric thyristors

YZPST-KN1000A16-BSTR60110


ELECTRICAL CHARACTERISTICS AND RATINGS

Asymmetric thyristors Type:YZPST A60110

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

waveshape to 80% rated VDRM. Gate open.

Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit,

comprising a 0.2 F capacitor and 20 ohms

resistance in parallel with the thristor under

test.

Blocking - Off State

VRRM (1)

VDRM (1)

20

1600

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

100 mA

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M

1000

A

Sinewave,180o conduction,Tsink=55oC

RMS value of on-state current

ITRMS

2000

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

20

KA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

2x106

A2s

10.0 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

1000

mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM

2.42

V

ITM =2000 A; Tj = 125 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

-

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

800

A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

-

300

-

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

-

3.0

-

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

5

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

1.6

0.8

ms

ITM =500 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

-

20

ms

ITM =1000 A; di/dt =25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

-

-

mC

ITM =1000 A; di/dt =25 A/ms;

VR ³ -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

-

-

K/W

Double sided cooled

Single sided cooled

Thermal resistance - case to heatsink

RQ (c-s)

-

-

K/W

Double sided cooled

Single sided cooled

Thermal resistance - junction to heatsink

RQ (j-s)

0.02

0.04

K/W

Double sided cooled

Single sided cooled

Mounting force

P

19

26

kN

Weight

W

-

g

about

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data



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