YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Home> Products> Semiconductor Disc Devices(Capsule Type)> Asymmetric Thyristor> 60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V

60mA Asymmetric Thyristor VRRM 30V

$601-99 Piece/Pieces

$48≥100Piece/Pieces

Payment Type:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Min. Order:1 Piece/Pieces
Transportation:Ocean,Air
Port:SHANGHAI
Product Attributes

Model No.YZPST-A1237NC280

BrandYZPST

IDRM60mA

IRRM10mA

Tjm-40~125℃

私域A1237NC280 截取视频15秒1-2.8M
私域A1237NC280 截取视频15秒2-4.83M
Product Description


Asymmetric Thyristor

YZPST-A1237NC280

Asymmetric Thyristor 25V  company has passed ISO9001 quality system certification and the quality is guaranteed.Suitable for your needs of SCR.

Blocking - Off State

VDRM (1)

VDSM (1)

VRRM (1)

VRSM(1)

2800

2800

30

30

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

     waveshape to 80% rated VDRM. Gate open.

     Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

      with EIA/NIMA Standard RS-397, Section

      5-2-2-6. The value defined would be in addi-

      tion to that obtained from a snubber circuit,

      comprising a 0.2 mF capacitor and 20 ohms

      resistance in parallel with the thristor under

      test.

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

 

10 mA

60 mA (3)

Critical rate of voltage rise

dV/dt (4)

3000 V/msec

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M

 

1237

 

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

ITRMSM

 

2555

 

A

Nominal value

Peak one cycle surge

(non repetitive) current

 

ITSM

 

-

 

18

 

KA

 

KA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.62x103

 

KA2s

8.3 msec and 10.0 msec

Latching current

IL

 

-

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

1000

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

2.1

 

V

ITM = 2000 A; Duty Cycle £ 0.01%; Tj =125 oC

Threshold vlotage

VT0

 

1.7

 

V

 

Slope resistance

rT

 

0.21

 

 

Critical rate of rise of on-state

current (5, 6)

di/dt

 

2000

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

1000

 

A/ms

Switching from VDRM £ 1000 V




Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

30

 

W

 

Average gate power dissipation

PG(AV)

 

10

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

IGT

 

-

400

-

 

mA

mA

mA

VD = 10 V;RL = 3 ohms;Tj = -40 oC

VD = 10 V;RL = 3 ohms;Tj = +25 oC

VD = 10 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

-

3.0

-

 

 

V

V

V

VD = 10 V;RL = 3 ohms;Tj = -40 oC

VD = 10 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VRGM

 

10

 

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

-

1

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

-

20

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cycle ³ 0.01%

Reverse recovery charge

Qrr

 

-

-

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

-

-

 

K/KW

Double sided cooled

Single sided cooled

Thermal resistamce - case to heatsink

RQ (c-s)

 

-

-

 

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistamce - junction to heatsink

RQ (j-s)

 

24

48

 

K/KW

Double sided cooled *

Single sided cooled *

Mounting force

P

19

26

 

kN

 

Weight

W

 

 

510

g

About




苏ICP备05018286号-1
Send Inquiry
*
*

We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Send