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Home > Products > Semiconductor Disc Devices(Capsule Type) > Asymmetric Thyristor > 60mA Asymmetric Thyristor VRRM 30V

60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V
60mA Asymmetric Thyristor VRRM 30V

60mA Asymmetric Thyristor VRRM 30V

Unit Price: USD 48 - 60 / Piece/Pieces
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Min. Order: 1 Piece/Pieces
Delivery Time: 30 Days
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Basic Info

    Model No.: YZPST-A1237NC280

    IT(AV): 1237A

    VTM: ≤2.7V

    VDRM / VDSM: 2800V

    IDRM: 60mA

    IRRM: 10mA

    Tjm: -40~125℃

    VRRM / VRSM: 30V

Additional Info

    Productivity: 100

    Brand: YZPST

    Transportation: Ocean,Air

    Place of Origin: China

    Supply Ability: 1000

    Certificate: ISO9001-2008,ROHS

    HS Code: 85413000

    Port: SHANGHAI

Product Description


Asymmetric Thyristor

YZPST-A1237NC280


Asymmetric Thyristor 25V company has passed ISO9001 quality system certification and the quality is guaranteed.Suitable for your needs of SCR.

Blocking - Off State

VDRM (1)

VDSM (1)

VRRM (1)

VRSM(1)

2800

2800

30

30

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

waveshape to 80% rated VDRM. Gate open.

Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit,

comprising a 0.2 mF capacitor and 20 ohms

resistance in parallel with the thristor under

test.

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

10 mA

60 mA (3)

Critical rate of voltage rise

dV/dt (4)

3000 V/msec

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M

1237

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

ITRMSM

2555

A

Nominal value

Peak one cycle surge

(non repetitive) current

ITSM

-

18

KA

KA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

1.62x103

KA2s

8.3 msec and 10.0 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

1000

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

2.1

V

ITM = 2000 A; Duty Cycle £ 0.01%; Tj =125 oC

Threshold vlotage

VT0

1.7

V

Slope resistance

rT

0.21

Critical rate of rise of on-state

current (5, 6)

di/dt

2000

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from VDRM £ 1000 V




Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

Average gate power dissipation

PG(AV)

10

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

-

400

-

mA

mA

mA

VD = 10 V;RL = 3 ohms;Tj = -40 oC

VD = 10 V;RL = 3 ohms;Tj = +25 oC

VD = 10 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

-

3.0

-

V

V

V

VD = 10 V;RL = 3 ohms;Tj = -40 oC

VD = 10 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VRGM

10

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

-

1

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

-

20

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cycle ³ 0.01%

Reverse recovery charge

Qrr

-

-

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR ³ -50 V

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

-

-

K/KW

Double sided cooled

Single sided cooled

Thermal resistamce - case to heatsink

RQ (c-s)

-

-

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistamce - junction to heatsink

RQ (j-s)

24

48

K/KW

Double sided cooled *

Single sided cooled *

Mounting force

P

19

26

kN

Weight

W

510

g

About




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Mr. John chang

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