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Direct Fast Control Thyristors DCR1278

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Basic Info

Model No.: YZPST-DCR1278

Additional Info

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: CHINA

Certificate: ISO9000

Port: SHANGHAI

Product Description

High Power Thyristor Phase Control

YZPST-DCR1278

Features: High dV/dt Capability. Blocking capabilty up to 4200 volts, Center Amplifying Gate Configuration, Guaranteed Maximum Turn-Off Time, All Diffused Structure

. Pressure Assembled Device


Direct Fast Control Thyristors DCR1278

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

1100

A

Sinewave,180o conduction,Tc=65oC

RMS value of on-state current

ITRMS

2000

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

16.4

KA

KA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

1.35x106

A2s

8.3 msec and 10.0 msec

Latching current

IL

300

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

-

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

2.2

V

ITM = 2900 A; Duty cPSTCle £ 0.01%; Tj = 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

-

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

100

A/ms

Switching from VDRM£ 1000 V


ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

-

W

tp = 40 us

Average gate power dissipation

PG(AV)

-

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

-

400

-

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

-

4.0

-

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

-

V

Dynamic


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

-

-

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

-

-

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

*

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V


* For guaranteed max. value, contact factory.


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

-

-

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

-

-

oC/W

Double sided cooled *

Single sided cooled *

Thermal resistamce - junction to sink

RQ (j-s)

0.024

-

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

20

24

kN

Weight

W

-

g


* Mounting surfaces smooth, flat and greased


CASE OUTLINE AND DIMENSIONS

Direct Fast Control Thyristors DCR1278

hirect fast control thyristors DCR1278

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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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