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High dV/dt Disc Type thyristor Pressure Assembled Device

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    Delivery Time: 30 Days

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Basic Info

Model No.: YZPST-KK2500A2500V

Additional Info

Productivity: 100

Brand: YZPST

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008

HS Code: 85413000

Port: Shanghai

Product Description

High Power Thyristor

YZPST-KK2500A2500V

HIGH Power Thyristor FOR PHASE CONTROL APPLICATIONS

Features: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time

. High dV/dt Capability . Pressure Assembled Device

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

2500


A

Sinewave,180o conduction,Tc=70oC

RMS value of on-state current

ITRMS

3900


A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

45000


42000

A


A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

5.5x106

A2s

8.3 msec

Latching current

IL

1000

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

500

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


2.00


V

ITM = 3000 A; Tj = 125 oC

Critical rate of rise of on-state

current (5, 6)

di/dt


800


A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt


300


A/ms

Switching from VDRM£ 1000 V

High dV/dt Disc Type thyristor Pressure Assembled Device



Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

200


W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W


Peak gate current

IGM

20

A


Gate current required to trigger all units

IGT

300

200

125

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units



VGT

0.30

5

4


V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM


20


V



Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

2.0


ms

ITM = 50 A; VD = 67% VDRM

Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -5 V)

tq

80


ms

ITM > 2000 A; di/dt = 25 A/ms;

VR³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% VDRM ;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery current

Irr

200


A

ITM > 2000 A; di/dt = 25 A/ms;

VR³ -50 V; Tj = 125 oC


THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150

oC


Thermal resistance - junction to case

RQ (j-c)


0.012


oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)


0.002


oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

8000

35.5

10000

44.4

lb.

kN


Weight

W



3.5

1.60

Lb.

Kg.



* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data

HIGH POWER THYRISTOR YZPST-KK2500A2500V

A: 73 mm

B: 109 mm

C: 98 mm

E: 36 mm


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Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

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